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    Littelfuse Inc P4SMA11A

    ESD Protection Diodes / TVS Diodes 9.4V 400W 5% Uni-directional
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    TTI P4SMA11A Reel 5,000
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    A11AND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EM6A9160TSA-5G

    Abstract: EM6A9160TSA EM6A9160 em6a9160ts em6a916
    Text: EtronTech EM6A9160TSA 8M x 16 DDR Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • Fast clock rate: 200MHz Differential Clock CK & CK input Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture


    Original     		PDF EM6A9160TSA 200MHz 16-bit EM6A9160TSA-5G EM6A9160TSA EM6A9160 em6a9160ts em6a916

    ba 8817

    Abstract: No abstract text available
    Text: SM532164U7UF6BU March 30, 2000 Revision History • March 30, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • December 17, 1998 Added DC and AC specifications.


    Original     		PDF SM532164U7UF6BU ba 8817

    Untitled

    Abstract: No abstract text available
    Text: May 1998 Revision 3.0 data sheet PDC8RV7284- 103/10 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M words


    Original     		PDF PDC8RV7284- 64MByte PC/100 64-megabyte 168-pin, MB81F64842B-

    Untitled

    Abstract: No abstract text available
    Text: October 1998 Revision 1.0 data sheet PDC8RV7284C- 102/103 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284C-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M


    Original     		PDF PDC8RV7284C- 64MByte PC/100 64-megabyte 168-pin, MB81F64842C-

    TSOP 1738 DATA SHEET

    Abstract: 1738 tsop application and features of TSOP 1738 Datasheet of tsop 1738 tsop 1738 diagram free download datasheet TSOP 1738 tsop 1738 DATASHEET tsop 1738 of tsop 1738
    Text: July 1998 Revision 1.1 data sheet PDC8RV7284J- 102/103 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284J-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M


    Original     		PDF PDC8RV7284J- 64MByte PC/100 64-megabyte 168-pin, MB81F64842C- TSOP 1738 DATA SHEET 1738 tsop application and features of TSOP 1738 Datasheet of tsop 1738 tsop 1738 diagram free download datasheet TSOP 1738 tsop 1738 DATASHEET tsop 1738 of tsop 1738

    Untitled

    Abstract: No abstract text available
    Text: January 1999 Revision 1.0 data sheet PDC8RV7284D- 75/102 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284D-(75/102)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M


    Original     		PDF PDC8RV7284D- 64MByte PC/100 64-megabyte 168-pin, MB81F64842D-

    K4H641638N

    Abstract: K4H641638 tsop 4036 DDR266 DDR333 DDR400 ap 6928 7472 truth table k4h641638n-lc
    Text: DDR SDRAM K4H641638N 64Mb N-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4H641638N K4H641638N K4H641638 tsop 4036 DDR266 DDR333 DDR400 ap 6928 7472 truth table k4h641638n-lc

    Untitled

    Abstract: No abstract text available
    Text: July 1998 Revision 1.1 data sheet PDC8RV7284B- 103/10 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284B-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M


    Original     		PDF PDC8RV7284B- 64MByte PC/100 64-megabyte 168-pin, MB81F64842B-

    DDR003-0B

    Abstract: IC43R32400
    Text: IC43R32400 Document Title 1M x 32 Bit x 4 Banks 128-MBIT DDR SDRAM Revision History Revision No History Draft Date 0A 0B Initial Draft Mass production July 21,2004 November 10,2004 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC43R32400 128-MBIT) DDR003-0B 500MHz 400MHz IC43R32400

    4mx32

    Abstract: ba1s EM6A9320BI-4 EM6A9320BI-5 etron 4mx32 Etron Technology EM6A9320
    Text: EtronTech EM6A9320 4M x 32 DDR SDRAM Etron Confidential Preliminary Rev 0.3 7/2002 Features Overview • Fast clock rate: 350/333/300/285/250/200 MHz • Differential Clock CK & CK# input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128


    Original     		PDF EM6A9320 EM6A9320 32-bit 4Mx32 ba1s EM6A9320BI-4 EM6A9320BI-5 etron 4mx32 Etron Technology

    EM6AA320BI-5

    Abstract: Etron ba1s EM6AA320BI-4 BA1 K11
    Text: EtronTech EM6AA320 8M x 32 DDR SDRAM Etron Confidential Preliminary Rev 0.0 7/2002 Features Overview • Fast clock rate: 300/285/250/200 MHz • Differential Clock CK & CK# input The EM6AA320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256


    Original     		PDF EM6AA320 EM6AA320 8Mx32 EM6AA320BI-5 Etron ba1s EM6AA320BI-4 BA1 K11

    K4H641638N

    Abstract: No abstract text available
    Text: DDR SDRAM K4H641638N 64Mb N-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4H641638N K4H641638N

    ba1s

    Abstract: EM6A9320BI-4MG EM6A9320 EM6A9320BI em6a9320bi-4
    Text: EtronTech EM6A9320BI Revision History Revision 0.9D Nov., 2006 Change speed to 250MHz Revise DC and AC characteristics Revision 0.9C(Mar., 2006) Deleted confidential wording Revision 0.9B(Mar., 2006) Revise the DC and AC characteristics Etron Technology, Inc.


    Original     		PDF EM6A9320BI 250MHz 4Mx32 Nov/2006) EM6A9320 high11 200uS 200xCK ba1s EM6A9320BI-4MG EM6A9320BI em6a9320bi-4

    ba1s

    Abstract: 8Mx32 EM6AA320BI-5MSG EM6AA320BI-5MS
    Text: EtronTech EM6AA320 8M x 32 DDR SDRAM Preliminary Rev 0.4 June/2007 Features Overview • Fast clock rate: 200 MHz • Differential Clock CK & CK# input The EM6AA320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256 Mbits. It is internally configured as a quad 2M x 32


    Original     		PDF EM6AA320 June/2007) EM6AA320 200uS 200xCK 8Mx32 ba1s EM6AA320BI-5MSG EM6AA320BI-5MS

    K4H641638N

    Abstract: DDR333 DDR400 k4h641638n-lc
    Text: DDR SDRAM K4H641638N 64Mb N-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4H641638N K4H641638N DDR333 DDR400 k4h641638n-lc

    em6a9160ts

    Abstract: EM6A9160 DDR 8MX16 tsop 2 66 pin em6a9160ts-5 8MX16DDR
    Text: EtronTech EM6A9160 8M x 16 DDR Synchronous DRAM SDRAM (Rev. 1.4 May/2006) Pin Assignment (Top View) Features • • • • • • • • • • • • • • • • • Fast clock rate: 300/275/250/200MHz Differential Clock CK & /CK Bi-directional DQS


    Original     		PDF EM6A9160 May/2006) 300/275/250/200MHz 16-bit 8Mx16 em6a9160ts EM6A9160 DDR 8MX16 tsop 2 66 pin em6a9160ts-5 8MX16DDR

    EM6A9320

    Abstract: EM6A9320BI-4 EM6A9320BI-5 BA1l4
    Text: EtronTech EM6A9320 4M x 32 DDR SDRAM Preliminary Rev 0.6 5/2006 Features Overview • Fast clock rate: 350/333/300/285/250/200 MHz • Differential Clock CK & CK# input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128


    Original     		PDF EM6A9320 EM6A9320 32-bit 4Mx32 EM6A9320BI-4 EM6A9320BI-5 BA1l4

    EM6A9320BIA-4H

    Abstract: EM6A9320BIA ba1s EM6A9320BI EM6A9320 EM6A9320BIA-5H J3J10 e-tron
    Text: EtronTech EM6A9320BIA 4M x 32 bit DDR Synchronous DRAM SDRAM Etron Confidential Preliminary (Rev 1.7 Nov. /2009) Features Overview • Fast clock rate: 200/250 MHz • Differential Clock CK & CK input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM


    Original     		PDF EM6A9320BIA EM6A9320 EM6A9320BIA-4H EM6A9320BIA ba1s EM6A9320BI EM6A9320BIA-5H J3J10 e-tron

    EM6A9320BI-5MG

    Abstract: ba1s EM6A9320 EM6A9320BI em6a9320bi-5
    Text: EtronTech EM6A9320BI Revision History Revision 1.0 Mar., 2007 Delete ‘Preliminary’ Revise the AC characteristics Revision 0.9E(Sep., 2006) Revise the AC characteristics Revise CAS Latency Revision 0.9D(Jul., 2006) Revise the AC characteristics Revision 0.9C(Jul., 2006)


    Original     		PDF EM6A9320BI 4Mx32 200uS 200xCK EM6A9320BI-5MG ba1s EM6A9320 EM6A9320BI em6a9320bi-5

    k4h641638q

    Abstract: No abstract text available
    Text: Rev. 1.1, Sep. 2010 K4H641638Q 64Mb Q-die DDR SDRAM 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4H641638Q 66TSOP- k4h641638q

    Untitled

    Abstract: No abstract text available
    Text: July 1998 Revision 3.1 data sheet PDC8RV7284A- 103/10 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284A-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M


    Original     		PDF PDC8RV7284A- 64MByte PC/100 64-megabyte 168-pin, MB81F64842B-

    EM6A9160TSA

    Abstract: cke02 EM6A9160 EM6A9160TS em6a916 ETRONTECH
    Text: EtronTech EM6A9160TSA 8M x 16 DDR Synchronous DRAM SDRAM Etron Confidential Advanced (Rev. 1.1 Aug. /2009) Features Table 1.Ordering Information • • • • • • • • Clock Data Rate Package Frequency EM6A9160TSA-4G 250MHz 500Mbps/pin TSOPII Fast clock rate: 250MHz


    Original     		PDF EM6A9160TSA EM6A9160TSA-4G 250MHz 500Mbps/pin 250MHz 16-bit EM6A9160TSA cke02 EM6A9160 EM6A9160TS em6a916 ETRONTECH

    AS4C8M16D1-5TIN

    Abstract: No abstract text available
    Text: AS4C8M16D1 8M x 16 DDR Synchronous DRAM SDRAM Released (Rev. 1.1, Feb. /2009) Confidential Features Overview Fast clock rate: 200MHz Differential Clock CK & CK input Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture


    Original     		PDF AS4C8M16D1 200MHz 16-bit AS4C8M16D1-5TIN

    Clarostat type J

    Abstract: Clarostat encoder panasonic rotational encoder clarostat alps rotary encoder 600EN-128-CBL 7 pin rotary Potentiometers alps
    Text: Series 600 & 690 Optical Encoders - S e rie s 600 L i g h t - D u t y Encoder Manually or motor operated rotary optical encoder that outputs two square waves at a maximum rate of 128 pulses in quadrature with other resolutions as low as 10 pulses available.


    OCR Scan     		PDF life-10 6900Q03200-00 CLAR06HAT Clarostat type J Clarostat encoder panasonic rotational encoder clarostat alps rotary encoder 600EN-128-CBL 7 pin rotary Potentiometers alps