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    A114 TRANSISTOR Search Results

    A114 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A114 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR A114

    Abstract: transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX L111-E1 H7CX-R11 diode a4W
    Text: Ordering Information List of Models Type Classification External connections Configuration Display digits Settings Power supply voltage Output Contact output SPDT Model H7CX-A114-N 100 to 240 VAC 4 digits Transistor output (SPST) Contact output (SPDT) 11-pin socket


    Original     		PDF H7CX-A114-N 11-pin H7CX-A114S-N VDC/24 H7CX-A114D1-N H7CX-A11-N H7CX-A11S-N H7CX-A11D1-N H7CX-A11SD1-N TRANSISTOR A114 transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX L111-E1 H7CX-R11 diode a4W

    YF04E

    Abstract: TXS0104ED
    Text: TXS0104E 4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS www.ti.com SCES651A – JUNE 2006 – REVISED JULY 2006 FEATURES • ESD Protection Exceeds JESD 22 A Port – 2000-V Human-Body Model (A114-B) – 200-V Machine Model (A115-A)


    Original     		PDF TXS0104E SCES651A 000-V A114-B) A115-A) 15-kV YF04E TXS0104ED

    YF04E

    Abstract: YF04 TXS0104ED
    Text: TXS0104E 4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS www.ti.com SCES651A – JUNE 2006 – REVISED JULY 2006 FEATURES • ESD Protection Exceeds JESD 22 A Port – 2000-V Human-Body Model (A114-B) – 200-V Machine Model (A115-A)


    Original     		PDF TXS0104E SCES651A 000-V A114-B) A115-A) 15-kV YF04E YF04 TXS0104ED

    LP2985A-10

    Abstract: lpf sot-23 pin 5 transistor 1f sot-23 LP2985-18DBVR LP2985-10DBVR LP2985-18DBVRG4 LP2985-25DBVRG4 LP2985-25DBVR LP2985-28DBVR LP2985-29DBVRG4
    Text: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •


    Original     		PDF LP2985 SLVS522N 150-mA 10-nF 000-V A114-A) A115-A) LP2985A-10 lpf sot-23 pin 5 transistor 1f sot-23 LP2985-18DBVR LP2985-10DBVR LP2985-18DBVRG4 LP2985-25DBVRG4 LP2985-25DBVR LP2985-28DBVR LP2985-29DBVRG4

    LP2985A-10

    Abstract: LPFG LPKL LP2985-10
    Text: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •


    Original     		PDF LP2985 SLVS522N 150-mA 10-nF 000-V A114-A) A115-A) LP2985A-10 LPFG LPKL LP2985-10

    LP2985-10

    Abstract: No abstract text available
    Text: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •


    Original     		PDF LP2985 SLVS522N 150-mA 000-V A114-A) A115-A) 10-nF LP2985-10

    LP2985A-10

    Abstract: LP2985-10DBVR lp2985 LP2985-10
    Text: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •


    Original     		PDF LP2985 SLVS522N 150-mA 10-nF 000-V A114-A) A115-A) LP2985A-10 LP2985-10DBVR lp2985 LP2985-10

    LP2985A-10

    Abstract: LP2985-50DBVR LP2985-10
    Text: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •


    Original     		PDF LP2985 SLVS522N 150-mA 000-V A114-A) A115-A) 10-nF LP2985A-10 LP2985-50DBVR LP2985-10

    LP2985A-10

    Abstract: LP2985-10
    Text: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) FEATURES 1 • • • • • • • • •


    Original     		PDF LP2985 SLVS522N 150-mA 000-V A114-A) A115-A) 10-nF LP2985A-10 LP2985-10

    lpf sot-23 pin 5

    Abstract: LP2985A-10 LP2985-10DBVR LP2985A-10DBVR LP2985A LP2985-10
    Text: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •


    Original     		PDF LP2985 SLVS522N 150-mA 10-nF 000-V A114-A) A115-A) lpf sot-23 pin 5 LP2985A-10 LP2985-10DBVR LP2985A-10DBVR LP2985A LP2985-10

    39SF512

    Abstract: 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020
    Text: SST Product Reliability SST Product Reliability INTRODUCTION The SST quality policy is: To satisfy customer requirements by providing products and services that are cost effective, on schedule, and with zero nonconformances to specifications. SST is developing a quality system in accordance with the


    Original     		PDF ISO-9001 S72023-00-000 SF3-33A 39VF040/39VF020/39VF010/39VF512 39SF512 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020

    Untitled

    Abstract: No abstract text available
    Text: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .


    Original     		PDF DTA114EM/EE/EUA/ECA/ESA OT523 /SOT323/SOT23 OT-723 OT-523 S1402004

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2010N MRF6V2010NB

    transistor A114

    Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2010N MRF6V2010NB transistor A114 a113 bolt AN1955 AN3263 A113 A114 A115 C101 JESD22

    transistor A114

    Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002K JESD22 OT-23 transistor A114 A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101

    transistor a114 esd

    Abstract: TRANSISTOR A114 A114 transistor 2n7002k
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002K 2N7002K JESD22 OT-23 transistor a114 esd TRANSISTOR A114 A114 transistor

    transistor A114

    Abstract: 2n7002k transistor a114 esd
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002K 2N7002K JESD22 OT-23 transistor A114 transistor a114 esd

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6003028-FL T2G6003028-FL JESD22-A114 2002/95/EC C15H12Br402) J-STD-020. EAR99

    MRF6V2300N

    Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2300N MRF6V2300NB MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22

    hatching machine

    Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22

    transistor A114

    Abstract: a114 transistor transistor a114 esd 2N7002KW
    Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002KW 2N7002KW JESD22 OT-323 transistor A114 a114 transistor transistor a114 esd

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002KW JESD22 OT-323

    MRF6V2300NB

    Abstract: transistor A113 MRF6V2300N
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 5, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2300N MRF6V2300NB transistor A113