A114* TRANSISTOR Search Results

TRANSISTOR A114

Abstract: transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX L111-E1 H7CX-R11 diode a4W
Contextual Info: Ordering Information List of Models Type Classification External connections Configuration Display digits Settings Power supply voltage Output Contact output SPDT Model H7CX-A114-N 100 to 240 VAC 4 digits Transistor output (SPST) Contact output (SPDT) 11-pin socket

YF04E

Abstract: TXS0104ED
Contextual Info: TXS0104E 4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS www.ti.com SCES651A – JUNE 2006 – REVISED JULY 2006 FEATURES • ESD Protection Exceeds JESD 22 A Port – 2000-V Human-Body Model (A114-B) – 200-V Machine Model (A115-A)

YF04E

Abstract: YF04 TXS0104ED
Contextual Info: TXS0104E 4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS www.ti.com SCES651A – JUNE 2006 – REVISED JULY 2006 FEATURES • ESD Protection Exceeds JESD 22 A Port – 2000-V Human-Body Model (A114-B) – 200-V Machine Model (A115-A)

LP2985A-10

Abstract: lpf sot-23 pin 5 transistor 1f sot-23 LP2985-18DBVR LP2985-10DBVR LP2985-18DBVRG4 LP2985-25DBVRG4 LP2985-25DBVR LP2985-28DBVR LP2985-29DBVRG4
Contextual Info: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •

LP2985A-10

Abstract: LPFG LPKL LP2985-10
Contextual Info: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •

LP2985-10

Contextual Info: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •

LP2985A-10

Abstract: LP2985-10DBVR lp2985 LP2985-10
Contextual Info: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •

LP2985A-10

Abstract: LP2985-50DBVR LP2985-10
Contextual Info: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •

LP2985A-10

Abstract: LP2985-10
Contextual Info: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) FEATURES 1 • • • • • • • • •

lpf sot-23 pin 5

Abstract: LP2985A-10 LP2985-10DBVR LP2985A-10DBVR LP2985A LP2985-10
Contextual Info: LP2985 SLVS522N – JULY 2004 – REVISED JUNE 2011 www.ti.com 150-mA LOW-NOISE LOW-DROPOUT REGULATOR WITH SHUTDOWN Check for Samples: LP2985 FEATURES – 2000-V Human-Body Model A114-A – 200-V Machine Model (A115-A) 1 • • • • • • • • •

39SF512

Abstract: 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020
Contextual Info: SST Product Reliability SST Product Reliability INTRODUCTION The SST quality policy is: To satisfy customer requirements by providing products and services that are cost effective, on schedule, and with zero nonconformances to specifications. SST is developing a quality system in accordance with the

Contextual Info: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .

Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

transistor A114

Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

transistor A114

Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

transistor a114 esd

Abstract: TRANSISTOR A114 A114 transistor 2n7002k
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

transistor A114

Abstract: 2n7002k transistor a114 esd
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

Contextual Info: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

MRF6V2300N

Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

hatching machine

Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications

transistor A114

Abstract: a114 transistor transistor a114 esd 2N7002KW
Contextual Info: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications

Contextual Info: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

MRF6V2300NB

Abstract: transistor A113 MRF6V2300N
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 5, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are