A10 DUAL OPERATIONAL Search Results

GDIP1-T14

Abstract: DG200AA
Contextual Info: SCOPE: Dual, SPST, CMOS, TTL-Compatible Analog Switch Device Type: -1 Generic Number: DG200AA x /883B Case Outline(s). Outline Letter Mil-Std-1835 K GDIP1-T14 or CDIP2-T14 A MACY1-X10 Case Outline 14 LEAD CERDIP 10 Pin TO-100 Package Code J14 A10 Absolute Maximum Ratings

ICM7332

Abstract: ICM7352 ICM7372 8 Bits 12 Bits
Contextual Info: ICM7372/7352/7332 ICmic DUAL 12/10/8-BIT VOLTAGE-OUTPUT DACS with Serial Interface and Adjustable Output Offset IC MICROSYSTEMS FEATURES • 12/10/8-Bit Monotonic Dual DAC in 16 Lead QSOP Package • Adjustable Output Offset • Wide Output Voltage Swing •

M5M4V16S20CTP

Abstract: M5M4V16s30 M5M4V16S30CTP M5M4V16S20
Contextual Info: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S20CTP-10, -12, -15 Jan. '97 16M (2-BANK x 2097152-WORD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz

M5M4V16s30

Abstract: M5M4V16S30CTP-10 M5M4V16S30CTP10 M5M4V16S30CTP M5M4V16S30CTP-12 M5M4V16S30CTP12
Contextual Info: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S30CTP-10, -12, -15 Jan. '97 16M (2-BANK x 1048576-WORD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz

M5M4V16S40

Abstract: M5M4V16S40CTP M5M4V16S40CTP-10
Contextual Info: MITSUBISHI LSIs SDRAM Rev. 1. 2 M5M4V16S40CTP-10, -12, -15 April '97 16M (2-BANK x 524288-WORD x 16-BIT) Synchronous DRAM Some of contents are subjected to change without notice. The M5M4V16S40CTP is a 2-bank x 524288-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and

M5M4V16s30

Contextual Info: MITSUBISHI LSIs SDRAM Rev. 1.0 J a n . '97 M5M4V16S20CTP-10, -12, -15 16M (2-BANK x 2097152-WORD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION The M5M4V16S20CTP is a 2-bank x 2097152-word x 4-bit Synchronous DRAM, with LVTTL interface. All inputs and

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CA726 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CA726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M

AAK2A

Abstract: M5M4V16s30 M5M4V16S30CTP
Contextual Info: MITSUBISHI LSIs SDRAM Rev. 1.0 Jan. '97 M5M4V16S30CTP-10, -12, -15 16M (2-BANK x 1048576-WQRD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M4V16S30CTP is a 2-bank x 1048576-word x 8bit Synchronous DRAM, with LVTTL interface. A ll inputs

Contextual Info: MITSUBISHI LSIs SDRAM Rev. 1.2 M 5 M 4 V 1 6 S 4 0 C T P -1 0, -12, -1 5 Aprii ’97 16M (2-BANK x 524288-WORD x 16-BIT) Synchronous DRAM Some of contents are subjected to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V16S40CTP is a 2-bank x 524288-word x 16-bit

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC726 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M

max100MHZ

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458AB64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module(Small Outline DIMM) on which 8 pieces of 64 M SDRAM : ¿/PD4564821 are assembled.

solar calculator

Abstract: 30076 Calculator digital EM34014A EM34014 M100 M300 16340 battery
Contextual Info: EM34014A 10/1210/12-DIGIT CALCULATOR BATTERY / SOLAR / DUAL POWER TYPE Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. April 2010 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

TCL271

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-458BA72 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T he M C-458B A72 is a 8,388,608 w ords b y 72 bits synchrono us dyna m ic RAM m odule on which 9 pieces of 64 M SD R A M : ¿¿PD4564621 are assem bled.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-458CB644 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB644 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M

MC-454AC724

Abstract: MC-454AC724F-A10 MC-454AC724F-A67 MC-454AD644-A10 MC-454AD644-A12 MC-454AD644-A67 PD4516 PD4516821
Contextual Info: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-454AC724 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC724 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB646 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

MC-454AD646

Abstract: MC-454AD646F-A10 MC-454AD646F-A80 168Pin DIMM NEC
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AD646 4 M-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE UNBUFFERED TYPE Description The MC-454AD646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 16 M SDRAM : ,uPD4516821 A Revision B are assembled.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458DA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-458DA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD644 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD644 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

C-458C

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CB646F and MC-458CB646LFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M SDRAM: ,uPD4564841 are assembled, and the MC-458CB646EFB is a 8,388,608 words by 64

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC726 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CB646F and MC-458CB646LFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M SDRAM: µPD4564841 are assembled, and the MC-458CB646EFB is a 8,388,608 words by 64