Untitled
Abstract: No abstract text available
Text: UPD4516821G5-A12-7JF IL08D C-MOS 16 M 1 M WORD x 8-BIT x 2 -BIT DRAM —TOP VIEW— 18 1 VDD GND 44 19 20 D0 2 43 D7 21 24 3 GND GND 42 25 26 D1 4 41 D6 27 28 5 VDD VDD 40 29 17 D2 6 7 GND D3 8 39 D5 GND 38 37 D4 16 32 31 12 14 9 VDD VDD 36 13 33 10 NC NC 35
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UPD4516821G5-A12-7JF
IL08D
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Untitled
Abstract: No abstract text available
Text: UPD4516161G5-A12-7JF IL08D C-MOS 16 M 512 K WORD x 16-BIT x 2 -BIT DRAM —TOP VIEW— 21 1 VDD GND 50 22 23 D0 2 49 D15 24 27 D1 3 48 D14 28 29 4 GND GND 47 30 31 D2 5 46 D13 32 20 D3 6 7 VDD D4 8 45 D12 VDD 44 43 D11 19 35 34 15 17 D5 9 42 D10 18 14 10 GND
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UPD4516161G5-A12-7JF
IL08D
16-BIT
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zilog z80
Abstract: pa67c 33A1S
Text: Programmable Peripheral PSD3XX Family Field-Programmable Microcontroller Peripheral Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications □ Wide Operating Voltage Range — L-Versions: 3.0 to 5.5 volts — Others: 4.5 to 5.5 volts
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ //¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The //PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524,288 x 16 x 2 word x bit x bank ,
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uPD4516421-PC
uPD4516821-PC
uPD4516161-PC
16M-bit
//PD4516421-PC,
4516821-PC,
4516161-PC
216-bit
44-pin
50-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 16:39 µPD23C16000L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT(WORD MODE) Description The µPD23C16000L is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE
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PD23C16000L
16M-BIT
16-BIT
PD23C16000L
42-pin
44-pin
48-pin
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g0424
Abstract: transistor B42 350
Text: bM2752S 00’ 23bb 35Ü H N E C E / / M OS IN TEG RA TED C IR C U IT JU P D 42S 16 1 7 0 ,4 2 S 1 7 1 7 0 ,4 2 S 1 8 1 7 0 16 M B IT D Y N A M IC RAM (FA S T PA G E M O D E & B Y T E W R IT E M ODE -PRELIMINARY-DESCRIPTIO N The NEC #PD42S16170, // PD42S17170 and ¿¿PD42S18170 are 1 048 576 words by 16 bits dynamic
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OCR Scan
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bM2752S
uPD42S16170
uPD42S17170
uPD42S18170
475mil)
P32VF-100-475A
P32VF-100-475A
g0424
transistor B42 350
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LE347
Abstract: toba Q 0265 R HS 8180 42S18180
Text: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N
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OCR Scan
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L427S2S
uPD42S16180
uPD42S17180
uPD42S18180
475mil)
P32VF-100-475A
LE347
toba
Q 0265 R
HS 8180
42S18180
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D4242
Abstract: IC 741 cn
Text: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and
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uPD42S16170L
uPD42S17170L
uPD42S18170L
b427525
004EbBL>
475mil)
P32VF-100-475A
P32VF-100-475A
D4242
IC 741 cn
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431016B 1M-BIT CMOS FAST SRAM 64K-WORD BY 16-BIT Description The µPD431016B is a high speed, low power, 1,048,576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.
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PD431016B
64K-WORD
16-BIT
PD431016B
44-pin
I/O16)
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*D431016
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431016BL 1M-BIT CMOS FAST SRAM 64K-WORD BY 16-BIT Description The µPD431016BL is a high speed, low power, 1,048,576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
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PD431016BL
64K-WORD
16-BIT
PD431016BL
44-pin
I/O16)
*D431016
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Untitled
Abstract: No abstract text available
Text: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N
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b427525
PD42S16160L,
PD42S17160L
/zPD42S18160L
P32VF-100-475A
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LA80P
Abstract: marking 80L
Text: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its
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OCR Scan
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b427525
uPD42S16180L
uPD42S17180L
uPD42S18170L
475mil)
P32VF-100-475A
P32VF-100-475A
LA80P
marking 80L
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PD42S
Abstract: No abstract text available
Text: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s
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b427525
uPD42S16190L
uPD42S17190L
uPD42S18190L
b427525
0042bE
475mil)
P32VF-100-475A
P32VF-100-475A
PD42S
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT UPD434016AL 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description T he ^¡P D 434016A L is a high speed, lo w pow er, 4 ,1 9 4 ,3 0 4 bits 26 2,14 4 w o rd s by 16 bits C M O S sta tic RAM. O pe ra ting su p p ly vo lta g e is 3.3 V ± 0.3 V.
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UPD434016AL
256K-WORD
16-BIT
34016A
44-pin
PD434016ALLE-A12--
S44G5-80-7JF5
434016AL.
PD434016AL
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4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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OCR Scan
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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PDF
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EZ 929
Abstract: S1616
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ //¿PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-W ORD B Y 16-BIT, FA ST P A G E M ODE, B Y T E READ/WRITE M O D E D escrip tion T h e ¿ iP D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L , 4 2 S 1 6 1 6 0 L , 4 2 1 8 1 6 0 L a re 1,048, 576 w ord s by 16 b its C M O S d y n a m ic R A M s .
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OCR Scan
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16-BIT,
S16160L,
IR35-207-3
P15-207-3
EZ 929
S1616
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PDF
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LE-60
Abstract: 42S18
Text: jtiPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 1 M words by 16 bits and designed to operate from a single power supply. Optional features
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OCR Scan
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uPD421x160/L
uPD42S1x160/L
16-Bit
42S16160
42S17160
42S18160
1601Power
Forthe4217/42S17,
fPD421x160/L,
1x160/L
LE-60
42S18
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PDF
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5M21
Abstract: No abstract text available
Text: 4 k /X V * Í \ £ W NEC Electronics Inc. íiPD421x180/L, 42S1X180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM Description The devices listed below are fast-page dynam ic RAMs organized as 1M words by 18 bits and designed to o perate from a single power supply. O ptional features
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OCR Scan
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iPD421x180/L,
42S1X180/L
18-Bit
42S16180
42S17180
42S18180
4217/42S17,
pPD421x180/L,
5M21
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PDF
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4623A
Abstract: K311 LE-60 GD34063
Text: blE » • b427525 0D34G75 flìfl «NECE jiPD421x180/L, 42S1x180/L x = 6, 7, 8 NEC Electronics Inc. 1,048,576 x 18-Bit Dynamic CMOS RAM _N E C ELECTRONICS INC 7~~ '¿U-l# W M li W Description The devices listed below are fast-page dynamic RAMs
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OCR Scan
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uPD421x180/L
uPD42S1x180/L
18-Bit
42S16180
42S17180
42S18180
For75BS
0D3410fl
pPD421x180/L,
42S1x180/L
4623A
K311
LE-60
GD34063
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PDF
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jl-026
Abstract: A151 A161 SST39VF020
Text: 2 Megabit 256K x 8 Multi-Purpose Flash SST39VF020 Preliminary Specifications FEATURES: • Organized as 256K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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OCR Scan
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SST39VF020
Wri-04
MO-142
32-Lead
jl-026
A151
A161
SST39VF020
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PDF
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Untitled
Abstract: No abstract text available
Text: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features
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OCR Scan
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bM2752S
0034G34
42S16160
42S17160
42S18160
4217/42S17,
WD-747W
jjPD421
160/L,
160/L
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PDF
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Untitled
Abstract: No abstract text available
Text: I % REVISIONS DffTE VIMKMM DESCMPDON LTR APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 11 SHEET PMC N/A T tfJU STANDARDIZED MILITARY DRAWING CHECKED BY Tfcy.'W I 12 13 18 19 MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON
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OCR Scan
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1AT28HC16L-70DM/88
IAT28HC16LN-70DM/883
1AT28HC16L-70LM/88
5962-8867603JX
5962-8867603LX
5962-8867603XX
1FN41
1AT28HC16L-55DM/883
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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