A1 GNC Search Results

d 009 401 04

Abstract: GWL8R000
Contextual Info: ENGINEERING BULLETIN Sprague-Goodman SG-207E Supercedes SG-207D MICROWAVE SAPPHIRE PISTONCAP TRIMMER CAPACITORS FEATURES • • • • Sapphire dielectric Very high Q at UHF and microwave frequencies Subminiature – smallest PISTONCAP® types Choice of 2 configurations and 6 mounting styles

d 009 401 04

Abstract: GUF1R200 GUF1R250 GWF2R500 GWF2R550 GWF4R500 GWF4R550 GWF8R000 GNV1R250 GUN1R250
Contextual Info: ENGINEERING BULLETIN Sprague-Goodman SG-207F Supercedes SG-207E MICROWAVE SAPPHIRE PISTONCAP TRIMMER CAPACITORS FEATURES • • • • Sapphire dielectric Very high Q at UHF and microwave frequencies Subminiature – smallest PISTONCAP® types Choice of 2 configurations and 6 mounting styles

C TV memory ic programme

Abstract: mitsubishi memory card busy 60 MF88M1-GMCAVXX 001FFFFH
Contextual Info: MITSUBISHI MEMORY CARD PRELIMINARY FLASH MEMORY CARDS MF82M1-GMCAVXX 8/16-bit Data Bus MF84M1-GMCAVXX Flash Memory Card MF88M1-GMCAVXX MF816M-GMCAVXX MF820M-GMCAVXX MF832M-GMCAVXX Connector Type MF82M1-GNCAVXX Two- piece 68-pin MF84M1-GNCAVXX MF88M1-GNCAVXX

A1 GNC

Abstract: tns capacitors
Contextual Info: K F B i MICRO »DEVICES RF2114 MEDIUM POWER LINEAR AMPLIFIER T y p ica l A p p lic a tio n s • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems Commercial and Consumer Systems • Driver for Higher Power Linear Applications

Contextual Info: HBLTEK f V H T1622 RAM Mapping 32x8 LCD Controller for I/O ^iC Features • • • • • • • • • • Operating voltage: 2.7V-5.2V Built-in RC oscillator 1/4 bias, 1/8 duty, frame frequency is 64Hz Max. 32x8 patterns, 8 commons, 32 segments Built-in internal resistor type bias generator

C TV memory ic programme

Abstract: d1340 MF816M-GMCAVXX MF816M-GNCAVXX MF820M-GMCAVXX MF820M-GNCAVXX MF82M1-GMCAVXX MF82M1-GNCAVXX mitsubishi memory card busy 60 MF84M1-GMCAVXX
Contextual Info: MITSUBISHI MEMORY CARD FLASH MEMORY CARDS MF82M1-GMCAVXX 8/16-bit Data Bus MF84M1-GMCAVXX MF88M1-GMCAVXX Flash Memory Card MF816M-GMCAVXX MF820M-GMCAVXX MF832M-GMCAVXX Connector Type MF82M1-GNCAVXX MF84M1-GNCAVXX Two- piece 68-pin MF88M1-GNCAVXX MF816M-GNCAVXX

A1 GNC

Abstract: BATWING sop-16
Contextual Info: RFH LINEAR POWER AMPLIFIER M IC R O « D E V IC E S • 6V DAMPS/AMPS Cellular Handsets Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Cellular Handsets Portable Battery Powered Equipment • 6V Japanese PDC-950 Cellular Handsets m ; Product Description

Contextual Info: O K I Semiconductor MSM5416283 2 6 2 ,1 4 4 -W o rd x 1 6 -B it M u ltip o rt D R A M DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and

A1 GNC

Abstract: d6508a DG50BA d6509 dg509a
Contextual Info: 19-0028; Rev 2; 2/96 M onolithic CMOS Analog M ultiplexors _ O m w iI D escription Both devices guarantee break-before-make switching. Maxim guarantees these muxes will not latch up if the power supplies are turned off with the input signals still

A5 GNC

Abstract: CY62128BLL-70ZRC CY62128B CY62128BLL-55SC CY62128BLL-55SI 0/mosfet A5 GNC
Contextual Info: CY62128B MoBL 128K x 8 Static RAM and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. 1CY62128B MoBL™ Features • 4.5V–5.5V operation • CMOS for optimum speed/power

A5 GNC

Abstract: 62128b-55 CY62128BLL CY62128B CY62128BLL-55SC CY62128BLL-55SI CY62128BLL-55ZI 62128B-70 62128b70
Contextual Info: CY62128B MoBL 128K x 8 Static RAM Features automatic power-down feature that reduces consumption by more than 75% when deselected. • 4.5V – 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)

A5 GNC

Contextual Info: 28B MoBL CY62128B MoBL® 128K x 8 Static RAM Features power-down feature that reduces power consumption by more than 75% when deselected. • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)

C8269

Abstract: 3.5 digits lcd display
Contextual Info: RCL Semiconductors Ltd. C9389E Touch Tone Calculator LSI GENERAL D E S C R IP T IO N C9389E is a CMOS LSI calculator chip with 8 digits arithmetic operations, single memory, extraction-of-square-root percentage calculation, auto power off and punctuation and touch tone

a5 gnc

Abstract: A1 GNC
Contextual Info: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active

A1 GNC

Contextual Info: MOSEL MS318003 512K X 16,1 MEG X 8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Access time: 200ns max. The M O S E L M S 3 18 0 0 3 is a C M O S Sl-gate m ask-program mable static read only m em ory organized as 5 2 4 ,2 8 8 words by 16 bits, or 1,0 4 8,57 6 words by 8 bits.

05300

Abstract: CY62128BLL-55SXI A5 GNC CY62128BLL-55SXC TSOP 87 CY62128B CY62128BLL-55ZXI
Contextual Info: CY62128B MoBL 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 , an active HIGH Chip Enable (CE2), an active LOW Output

a5 gnc

Abstract: CY62128BLL-55SXC CY62128B CY62128BLL-55SC cy62128bll-55zc cy62128bll
Contextual Info: CY62128B MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1),

A5 GNC

Abstract: CY62128B
Contextual Info: CY62128B MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1),

82c45

Contextual Info: UNITED MICROELECTRONICS 3QE ^3asass oooono t T - l S ‘3 l ~ O S T -£ 2 ~ 3 3 ~ ù 3 U M S 2 C 4 S 1 Parallel/A synchronous Communication Element Pin Configuration Features • IBM P C /A T com patible ■ U M 82 C 45 0 w ith on-board Centronix printer interface

Relais ITT

Abstract: DIODE 5TE elektronik DDR bauelemente DDR VEB M ik ro e le k tro n ik VEB Kombinat Transistoren DDR TRANSISTOR KATALOG translog Kombinat VEB A 281
Contextual Info: KOMBINAT VEB ELEKTRO- APPARATE - WERKE BERLIN-TREPTOW O ursalog G Digitale Bausteine M odul 20 In h a ltsverzeich n is Seite Allgemeine Übersicht Konstruktiver und funktioneller Aufbau Systemparameter Zusammenschaltregeln Betriebsdaten ursamat Gefäßsystem

CY62128BN

Abstract: CY62128BNLL-55SXI CY62128BNLL-55ZXI CY62128BNLL-70SXA
Contextual Info: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-06498 Spec Title: CY62128BN MOBL R 1-MBIT (128K X 8) STATIC RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62128BN MoBL 1-Mbit (128K x 8) Static RAM Functional Description[1] Features • Temperature Ranges

CY62128BNLL-70SXI

Abstract: CY62128BNLL-70ZXC CY62128BN CY62128BNLL-55SC CY62128BNLL-55SI CY62128BNLL-55SXC
Contextual Info: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active

CY62128BN

Abstract: CY62128BNLL-55SC CY62128BNLL-55SI CY62128BNLL-55SXC
Contextual Info: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active