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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
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MRF8S9100H
MRF8S9100HR3
MRF8S9100HSR3
MRF8S9100HR3
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
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D260-4118-0000
Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25GNR1
MRFE6VS25N
D260-4118-0000
MRFE6VS25L
MRFE6VS25GNR1
transistor J128
2422D
21-201-J
ATC100B2R7BT500XT
crcw12065k60f
avx c0805c103k5rac
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J307
Abstract: ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HR3 MRF8S9100HSR3 A114 A115
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
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MRF8S9100H
MRF8S9100HR3
MRF8S9100HSR3
MRF8S9100HR3
J307
ATC100B200JT500X
ATC100B200
AN1955
C101
JESD22
MRF8S9100HSR3
A114
A115
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
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MMRF1304L
MMRF1304LR5
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ATC100B102JT50XT
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
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MRF6V2300N
MRF6V2300NR1
MRF6V2300NBR1
MRF6V2300NR1
ATC100B102JT50XT
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J307
Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
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MRF8S9100H
MRF8S9100HR3
MRF8S9100HSR3
MRF8S9100HR3
J307
J249
AD255A
AN1955
MRF8S9100HSR3
J032
ATC100B200JT500XT
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Fair-Rite bead
Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
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MRF6V2300N
MRF6V2300NR1
MRF6V2300NBR1
MRF6V2300NR1
Fair-Rite bead
AN3263
ATC100B102JT50XT
MRF6V2300N
MRF6V2300NBR1
ds2054
multicomp chip resistor
100 pf, ATC Chip Capacitor
567 tone
ATC100B161JT500XT
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
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MMRF1304N
MMRF1304NR1
MMRF1304GNR1
MMRF1304NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
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MMRF1304N
MMRF1304NR1
MMRF1304GNR1
MMRF1304NR1
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ATC100B471JT200XT
Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25N
ATC100B471JT200XT
EB-38
651AT
ATC100B181JT300XT
ATC100B4R3CT500XT
CDR33BX104AKWY
C5750KF1H226ZT
Fair-Rite ATC
MRFE6VS25NR1
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D260-4118-0000
Abstract: 0119A 0190A
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
D260-4118-0000
0119A
0190A
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
25cale
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ATC200B103KT50XT
Abstract: ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
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MRF6V2300N
MRF6V2300NR1
MRF6V2300NBR1
MRF6V2300NR1
ATC200B103KT50XT
ATC200B203KT50XT
RF600LF-16
MRF6V2300NB
MRF6V2300NBR1
ATC100B331J
ds2054
ATC100B510GT500XT
RF transformer turn ratio 12
RF1000LF
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