A04TJLC Search Results

A04TJLC Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
A04TJLC		Coilcraft Inc	General Purpose Inductor, 0.0125uH, 5%, 1 Element, Air-Core, SMD, 1618, CHIP, 1618, ROHS COMPLIANT

A04TJLC Price and Stock

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Coilcraft Inc A04TJLC RF Inductors - SMD 12.5nH Unshld 5% 4A 3.4mOhms AECQ2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	A04TJLC		3,553			1 $2.05 10 $2.05 100 $2.05 1000 $1 10000 $0.935	Buy Now
Bristol Electronics	A04TJLC		666			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	A04TJLC		39		7	1 - 10 $0.75 100 $0.4875 1000 $0.4875 10000 $0.4875	Buy Now
Quest Components	A04TJLC		2,080			1 $0.9375 10 $0.9375 100 $0.9375 1000 $0.375 10000 $0.375	Buy Now
	A04TJLC		552			1 $0.9375 10 $0.9375 100 $0.9375 1000 $0.375 10000 $0.375	Buy Now
	A04TJLC		31			1 $1 10 $0.8 100 $0.5 1000 $0.5 10000 $0.5	Buy Now
Coilcraft Direct	A04TJLC		15,932		1	1 $0.97 10 $0.97 100 $0.97 1000 $0.63 10000 $0.25	Buy Now
ComSIT USA	A04TJLC		700			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip-Germany GmbH	A04TJLC		447			1 - 10 - 100 - 1000 - 10000 -	Get Quote

A04TJLC Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
A04TJLC		Coilcraft	RF inductor, air core, 5/10% tol, SMT, RoHS		Original	PDF

A04TJLC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all	Original	PDF	MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25L MRFE6VS25LR5
D260-4118-0000 Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac
J307 Abstract: ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HR3 MRF8S9100HSR3 A114 A115 Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all	Original	PDF	MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HSR3 A114 A115
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as	Original	PDF	MMRF1304L MMRF1304LR5
ATC100B102JT50XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT
J307 Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all	Original	PDF	MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 J249 AD255A AN1955 MRF8S9100HSR3 J032 ATC100B200JT500XT
Fair-Rite bead Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 Fair-Rite bead AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as	Original	PDF	MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as	Original	PDF	MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1
ATC100B471JT200XT Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
D260-4118-0000 Abstract: 0119A 0190A Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 25cale
ATC200B103KT50XT Abstract: ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC200B103KT50XT ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF