A04 RF AMP Search Results

C547* transistor

Abstract: BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5
Contextual Info: Application Note No. 015 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimised for minimum Noise Figure at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at

C547* transistor

Abstract: BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420
Contextual Info: Application Note No. 016 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimized for input and output return loss at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at

on semiconductor marking code A04

Abstract: marking A04 C BFY182
Contextual Info: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz

A21E

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz

XY 805 ic

Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
Contextual Info: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006

marking A04

Abstract: BFY181 p 181 V Q62702F1715
Contextual Info: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz

resonator B69500-A9107 siemens

Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Contextual Info: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active

BFP450

Abstract: BCR400 siemens power transistor siemens semiconductor small transistors Siemens rf power transistors BFP450 siemens
Contextual Info: Application Note No. 003 Discrete & RF Semiconductors The Vceo-Mystery or How to Use Low-Vceo-Transistors With High Operating Voltages Mobile communications in particular has forced the operating voltages of handheld equipment to a very low level. In order to achieve high gain and high fT, the Vceo of modern

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output J FREQ. MHz MODEL NO. GAIN, dB Typical at MHz 100 1000 2000 note 1 Min. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE POWER, dBm RANGE Typ. MAXIMUM OPERATING RESIS-6 DATA Style

af190

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) 100 1000 2000 Note 1 Min. DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm)

A08 monolithic amplifier

Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)

MMIC Amplifier A04

Abstract: MMIC A04 A04 monolithic amplifier MSA-0486-TR1 MSA-0486-TR2 MSA-04 MSA-0486 MSA-0486-BLK monolithic amplifier MSA A MSA-0486-TR1G
Contextual Info: f2 Products > RF ICs/Discretes > RF ICs > Silicon Amplifiers, Gain Blocks > MSA-0486 MSA-0486 >6V Fixed Gain, 12 dBm General Purpose Amplifier Description Lifecycle status: Active Features The MSA-04 is a general purpose cascadable 50ohm 12dBm gain block targeted for narrow

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

A09 RF Amplifier

Abstract: Asy transistor DQ06 4 BU9534KV VQFP100 DQ05
Contextual Info: 01W136A Signal processor LSI with anti-shock memory controller for CD players BU9534KV Dimension Units : mm BU9534KV is a digital signal processor LSI with built-in pre-servo amplifier, and anti-shock memory controller developed for CD players. This pre-servo amplifier is

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

A04 monolithic amplifier

Abstract: ram4 monolithic amplifier A04 AF190 M108520 MMIC Amplifier A04
Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629

MAR-4

Abstract: mmic mar-4 MAR4
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629

MAR-4

Abstract: A04 RF amplifier
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629

MAR-6

Abstract: MAR-1 MMIC marking a01 A03 MMIC MSA0485 mar-3 mar 536 mar6118 mar 1
Contextual Info: Drop-In Monolithic Amplifiers 50Ω MAR+ SERIES DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • MAR-1+, MAR-3+, MAR-4+ are equivalent to MSA-0185, MSA-0385, MSA-0485, respectively. • cascadable