A03 DBM Search Results

TC8703

Abstract: INVENTEC San Antonio C5088 D6089 INVENTEC San Antonio 10 kbc1122 SP8K10SFD5_ROHM 25LF040A CN17-4 INVENTEC
Contextual Info: San Antonio VP BUILD 2005 1215 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : San Antonio 10 SIZE CODE A3 CS SHEET REV DOC. NUMBER TC8703 1 A03 OF 65 TABLE OF CONTENTS

r133

Abstract: BFP450 siemens S11 SIEMENS BCR400 BFP450 a03 dbm a03 amplifier
Contextual Info: Application Note No. 031 High Frequency Components G. Lohninger A Low Noise Amplifier at 1.9 GHz offers +14 dBm Input Intercept Point This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at

MARKING CODE 13t sot363

Abstract: A03 MMIC mmic a03 sot363 13t mh 7400 marking 8019 7476 7476 PIN DIAGRAM dbl 8466 amplifier siemens
Contextual Info: SIEMENS BGA425 S i-M M IC -A m p lifier in SIEGET 25-Technology Prelim inary Data # # # # # # # M ultifunctional Case. 50 £2 Block LNA/M IX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2=22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V D= 3 V ,lD=9.5m A)

RETU 3.02

Abstract: OT363 K2280
Contextual Info: S IE M E N S BGA425 S i - M M I C - A m p lif ie r in SIEGET 25-Technology Preliminary Data # Multifunctional Case. 50 Q Block LNA/MIX # Unconditionally stable # G a in [s ^ f^ S .S d B at 1.8 G H z (appl.1) G ain [Saif =22 d B at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z (VD=3V,lD=9.5mA)

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA420 in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s 21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz Vd=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

A03 transistor

Abstract: 3V02 88-FF
Contextual Info: S IE M E N S BGA420 Si-MMIC-Amplifier in SIEGET 25-Technoiogy Preliminary Data # • • • # # Cascadable 50 Q-Gain Block Unconditionally stable Gain |s21f= 1 3 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

a03 dbm

Abstract: marking code 8Ff 661 a03 mmic a03 marking A03 BGA420 GPS05605 Q62702-G0057
Contextual Info: SIEM ENS BGA420 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA425 in SIEGET 25-Technology Preliminary Data # # # # # # # Multifunctional Case. 50 D. Block LNA/MIX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2 = 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V,lD=9.5mA)

MCL SRA-1

Abstract: MCL SRA-1 connections MCL gra-3 MCL sra 1 MCL 1 SBL-1 MCL SBL-1 MCL SRA MCL TAK 6 MCL SRA-3
Contextual Info: F r eq u e n c y M ix e r s Level 7 500 Hz to3.5 GHz GRA SRA +7 dBm LO, up to +1 dBm RF LCM tf ISOLATION. dB • ; ^ V Q M H O N ‘y f CASH' C os« P rice $ öeeRF/IF ■ G R A-l GRA-3 GRA-6 GRA-8 Rana» ’ ■, '1 ‘t T c t p - ' Typ. Min. ïyp MM üt

A08 monolithic amplifier

Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SAM-1 Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: SAM-1 a. RF power, 50mW b. Peak IF current, 40mA print this page • General Quality Control Procedures and Environmental

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SAM-3 Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: SAM-3 a. RF power, 50mW b. Peak IF current, 40mA print this page • General Quality Control Procedures and Environmental

MAV-1

Abstract: ww107 MAV1 SSAN 990-113
Contextual Info: M onolithic A mplifiers 50a B roadband DC to 2 .5 GHz Q MAR-SM MAV-SM up to +17.5 dBm output GAIN. dB Typical at MHz MAXIMUM POWER. dBm note MODEL NO. 100 1000 2000 Min. M AR-ISM MAR-2SM MAR-3SM MAR-4SM D C -1000 DC-2000 DC-2000 D C -1000 18.5 12.5 12.5

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SAM-2 Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: SAM-2 a. RF power, 50mW b. Peak IF current, 40mA print this page • General Quality Control Procedures and Environmental

af190

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) 100 1000 2000 Note 1 Min. DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm)

mar a06

Abstract: marking A08
Contextual Info: M A m plifiers onolithic 50q B roadband DC to 2 .5 GHz MAR-SM MAV-SM up to +17.5 dBm output GAIN dB typical a t MHz FREQ.0 (M Hz) M O D E L* NO. 100 1000 2000 _ MAXIMUM POWER (dBm) Note 1 Min. DYNAMIC RANGE VSWR C l) Typ. ABSOLUTE DC MAXIMUM OPERATING RATING7

Contextual Info: FREQUENCY DOUBLERS Surface Mount ❏ 50Ω HIGH HARMONIC REJECTION 50 kHz to 9600 MHz SURFACE MOUNT KBA SK SYK FREQUENCY MHz MODEL NO. Input Output AK RF INPUT PWR dBm FD FK i HARMONIC OUTPUT dBc CONVERSION LOSS dB Note B C O N N E C T I O N 10 SM2 ln 24 26

Contextual Info: high rejection of 1st and 3rd harmonics Frequency Doublers input power 0 to + 20dBm 5 KHz to 3000 MHz case style selection outline drawings see Table of Contents SK FREQUENCY MHz RF INPUT PWR. dBm AK CONVERSION LOSS dB ‘HARMONIC OUTPUT, dB CARD DATA CASE

mcl sbl-1

Abstract: MCL SRA-8 MCL SRA-1 MCL TFM-2 MCL TAK-5 MCL SRA-3 A06 825 MCL SBL-1X MCL SRA-1 connections MCL sam-1
Contextual Info: FREQUENCY MIXERS Plug-In & Flatpack LEVEL 7 500 Hz to 4.3 GHz ASK-W38 ASK-X65 ROSE SAM SRA SBL SIMA +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. o ASK-1l =o ASK-2l o o o o o o LO/RF IF fL-fU CONVERSION LOSS dB _ Mid-Band m x σ Max. Total Range Max.

MCL SRA-1

Abstract: MCL SBL-1 MCL TFM-2 MCL SRA-3 MCL SRA-8 MCL sra-2 MCL SRA-1 connections mcl tuf-1 MCL TAK-5 MCL SBL-1X
Contextual Info: FREQUENCY MIXERS Plug-In & Flatpack LEVEL 7 500 Hz to 4.3 GHz ASK-W38 ASK-X65 ROSE SAM SRA SBL SIMA +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. o ASK-1l =o ASK-2l o o o o o o LO/RF IF fL-fU CONVERSION LOSS dB _ Mid-Band m x σ Max. Total Range Max.

FYP35

Abstract: FYP 35 3DD5D
Contextual Info: Frequency D oublers 500 Surface Mounts H igh Harm onic R ejectio n 5 kHz to 3000 MHz SURFACE MOUNT mmma MHz RF INPUT PWR. dBm CONVERSION LOSS * HARMONIC CAPD DATA OUTPUT, d fic i i i i i i i i i i i i i i i i i i i i i i CASE STYLE C <3 W tt £ PRICE iilllil

MCL SBL-1

Abstract: MCL SBL -1X mcl sbl 1 MCL SBL-1X MCL SRA-1 MCL TFM-2 MCL SAM-2 MCL 1 SBL-1 MCL SRA MCL TAK-5
Contextual Info: FREQUENCY MIXERS Plug-In & Flatpack LEVEL 7 500 Hz to 4.3 GHz ASK-W38 ASK-X65 ROSE SAM SRA SBL SIMA +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. o ASK-1l =o ASK-2l o o o o o o LO/RF IF fL-fU CONVERSION LOSS dB _ Mid-Band m x σ Total Range Max. Max.

MCL sam3

Abstract: MCL SAM-2 MCL SBL -1X MCL SAM-3 MCL SRA-1 mcl sbl 1 MCL SRA MCL sra 1 MCL ROSE-2 MCL SBL-1
Contextual Info: Items removed from catalog highlighted : ASK-2, ROSE-1, ROSE-2, SAM-2, SAM-3, SRA-149, SBL-1Z, SIMA-5, TFM-5, TUF-11A FREQUENCY MIXERS Plug-In & Flatpack LEVEL 7 500 Hz to 4.3 GHz ASK-W38 ASK-X65 ROSE SAM SRA SBL SIMA +7 dBm LO, up to +1 dBm RF FREQUENCY

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C qualified • ESA/SCC Detail Spec. No.: 5106/014