A01T Search Results

Contextual Info: 33 S-parametersDiskOlderForm To simplify computer modeling of RF circuits, Coilcraft offers a disk containing S-parameters for its 0603CS, 0805 CS/HS, 1008 CS/HS, 1206 CS surface mount inductors and 0906/1606 and A01T-B10T surface mount “spring” air core inductors.

Based LEDs

Contextual Info: Product OD-A01T52-05PD based LEDs T 5.5k color amber product-catalog Based LEDs color amber part no. OD-A01T52-05PD voltage [V] 5-6 current [mA] 13-19 wavelength [nm] 602 operating temperature [°C] -25 . +60 storage temperature [°C] -30 . +80 chip construction

Contextual Info: J. To simplify computer modeling of RF circuits, Coilcraft offers a disk containing S-parameters for its 0603HS, 0805 CS/HS, 1008 CS/HS, 1206 CS surface mount inductors and 0906/1606 and A01T-B10T surface mount “spring” air core inductors. The two port S-parameters S11, S21, S12 and S22

ST MARKING STYLE

Abstract: D R MARKING
Contextual Info: A CALIFORNIA MICRO DEVICES PAC 27A01 P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK Features • Matched resistor pair • Tight parametric control • Long term stability • SOT-23 package for space critical applications A p p licatio n s • Matched resistor pair

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

IDT71502

Abstract: IDT71502S25 IDT49C402 IDT39C10 1DT74FCT programmable pipeline microcode memory 71502
Contextual Info: CM O S STATIC RAM 64K 4 K x 16-BIT REGISTERED RAM w /S P C 1 IDT 71502S IDT 71502L FEATURES: DESCRIPTION: • 4K x 16 RAM with registered outputs, serial or parallel load and readback capability In only 48 pins • Serial Protocol Channel allows serial load and readback of RAM

acbw

Abstract: DSG-71JB
Contextual Info: Integrated Device Technology, Inc. 256KB AND 512KB SECONDARY CACHE MODULES FOR THE INTEL PENTIUM CPU AND INTEL 82430FX TRITON CORE LOGIC PCISET FEATURES • For Intel Pentium CPU-based systems using the Intel Triton core logic PC feet • Asynchronous and pipelined burst SRAM options in the

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

TRAM1812

Abstract: GSM Intercom From circuit B10T 10nK 63 TRAM4015 TRAM1008 TRAM0603 TRAM0805 TRAM132
Contextual Info: TOKEN TRAM Air Core Coils Spring Inductors SMD Air Core Coils Flat Top Spring Inductors SMD Air Core Coils - TRAM Series Token offers The Smallest Air Coil Inductors for Only 1.8 x 2.0 x 2.0 mm (TRAM) Preview The latest range of air core surface mount coils from Token is fully compliant with RoHS legislation and

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

81c1000

Abstract: ATC100B241JT200XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

MC1648

Abstract: LTYW motorola varactor MC12148D 32236
Contextual Info: M M O TO R O LA — — M C 12148 Low Power Voltage Controlled O scillator The MC12148 requires an external parallel tank circuit consisting of the inductor (L) and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator (VCO). This

Rev0-27

Abstract: ev charging potential transformer 230v ac max7861 MAX78700 vqb 15
Contextual Info: MAX78615+LMU Isolated Energy Measurement Processor for Load Monitoring Units GENERAL DESCRIPTION FEATURES The MAX78615+LMU is an isolated energy measurement processor EMP for load monitoring and control of any 2-wire single-phase or 3-wire split-phase (120/180°) AC circuit. It

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical

DB-85025-870

Abstract: 74L74 B45196H3106K109 PD85025-E capacitor 104k x7r 50 murata CAPACITOR 334k PD85025 code J4 diode EEVHB1V100P EXCELDRC35C
Contextual Info: DB-85025-870 RF power amplifier demonstration board for UHF OFDM radio using PD85025-E Features • Excellent thermal stability ■ Frequency: 700 - 870 MHz ■ Supply voltage: 13.6 V ■ Output power: 10 WPEP ■ Gain: 13.7 ± 0.5 dB ■ Efficiency: 40 % - 51 %

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

3731

Abstract: 7230 I-015
Contextual Info: HIGH FREQUENCY, SURFACE-MOUNT, WASHABLE INDUSTRIAL GRADE BUILT-IN CAP CERAMIC RESONATORS AWSCR Series FEATURES: • Industrial grade. • High stability washable type, reflow capable. • • Small size, light weight Excellent environmental resistance. •

marking BS SOT23

Abstract: sot-23 Marking c1 marking TB HIP5020 PAC27A01 marking code R2 sot23 marking code LE SOT 23 california micro devices marking
Contextual Info: 2 + %) CALIFORNIA MICRO DEVICES P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK Features • Matched resistor pair • Tight parametric control • Long term stability • SOT-23 package for space critical applications Applications • Matched resistor pair • Precision division

334k capacitor

Abstract: capacitor 104k x7r 50 104K capacitor 104k x7r 100 capacitor 22 pf capacitor 104k x7r 50 ATC capacitor 100b 100B Zener 104k x7r 100 murata CAPACITOR 334k
Contextual Info: DB-85025-520 BOM Designator Manufacturer B1 PANASONIC Size B2 PANASONIC C1, C2 MURATA 1206 Value Comment Part Code Ferrite Bead EXCELDRC35C Ferrite Bead EXCELDRC35C 120 pF Capacitor GRM42-6 COG 121J 50 C3 MURATA 1206 1 nF Capacitor GRM42-6 COG 102J 50 C4 MURATA

B10T

Abstract: 1008ls of coilcraft 0603CS 0402CS 80500 1812LS-224
Contextual Info: Document 158-1 Modeling Coilcraft RF Inductors This data allows you to create a model that adequately simulates the behavior of Coilcraft RF inductors from 1 MHz to 1.8 GHz. PSpice Equivalent of Circuit An equivalent PSpice® model of a practical inductor is

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

H2 storage tank

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Pow er V oltage Controlled O scillator The MC12148 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator

Contextual Info: STEVAL-TDR027V1 Portable UHF 2-way radio demonstration board based on the PD84008L-E Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: > 6 W ■ Power gain: 11.7 ± 0.5 dB ■ Efficiency: 46% - 71%