A011B Search Results

4430B

Abstract: 256x128x8
Contextual Info: |Ordering number : EN4430B] CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single S V power supply and is organized as 32768 words x 8 bits. By using memory

Contextual Info: FM25L04B 4-Kbit 512 x 8 Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes

FM25L04

Abstract: FM25L04-GA Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25L04 – Automotive Temp. 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

HCF 40188

Abstract: 40188 4018 8 pin 4018B BY804 HCF4018 HCF4018BF
Contextual Info: s e s-THonsoN 07c d u b s / m u s I ïia ia a ? o n m ttt a • ï . '| - , r — IN T E G R A T E D ¡ r n " k K ' : h c c /h c f 4o i 3B C IR C U IT 7929225 I ■— S G S SEMICONDUCTOR CQRP 'T^YS^3-gil PRESETTABLE DIVIDE-BY-N COUNTER • • • • •

FM25L04B

Abstract: FM-25
Contextual Info: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25L04

Abstract: FM25L04-G FM25L04-S LTER
Contextual Info: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme

Contextual Info: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

AEC-Q100-002

Abstract: FM25L04B
Contextual Info: Preliminary FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes

HA 1166

Abstract: LC78866V SSOP30
Contextual Info: Ordering number :EN-&4450 CMOS LSI NO. LC78866V 4450 S A \Y O 16-Bit A/D Converter Overview Package Dimensions The LC78866V is a 16-bit CMOS A/D converter with a built-in 4-channel input multiplexer. The LC78866V is optimal for use in low band digital sampling and uses a

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25L04B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

FM25L04-GTR

Abstract: FM25L04 FM25L04-S FM25L04-G
Contextual Info: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme

FM25L04B-G

Abstract: FM25L04B AEC-Q100-002
Contextual Info: Preliminary FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

25L04B-GA

Contextual Info: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 10 Trillion 1013 Read/Writes NoDelay Writes Advanced High-Reliability Ferroelectric Process

FM25040

Abstract: FM25160 FM25160-P FM25160-S MS-001 5C260
Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: AEC Q100 Grade 1 Compliant FM25L04 – Automotive Temp. 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L04

Abstract: FM25L04-S FM25L04-G
Contextual Info: Pre-Production FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process