A0-A7 ROM Search Results

Contextual Info: 27C010T 1 Megabit 128K x 8-Bit OTP EPROM VPP 1 32 A5 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4

Contextual Info: 27C010T 1 Megabit 128K x 8-Bit OTP EPROM A5 VPP 1 32 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4

27C010T

Contextual Info: 27C010T 1 Megabit 128K x 8-Bit OTP EPROM A5 VPP 1 32 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4

512 eeprom dip 32-pin

Abstract: Real Time Clock 34-pin DS1646 DS1647 DS1647P DS164XP DS9034PCX
Contextual Info: DS1647/DS1647P PRELIMINARY DS1647/DS1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source

DS1646

Abstract: DS1647 DS1647P DS164XP DS9034PCX
Contextual Info: DS1647/DS1647P PRELIMINARY DS1647/DS1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source

5962-8606301XA

Abstract: SMJ27C256-25JM 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256 SMJ27C256-30JM
Contextual Info: UVEPR OM UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063

5962-8606308XA

Abstract: 5962-8606302XA 5962-8606301XA 125OC 27C256-12 27C256-15 AM27C256 AS27C256 5962-8606305XA 5962-8606306XA
Contextual Info: UVEPROM AS27C256 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • -55OC to 125OC operation • MILITARY Processing Methods

5962-8606301XA

Abstract: 5962-8606305YA 5962-8606302XA 5962-8606312YA 5962-8606308YA 5962-8606308XA 5962-8606306XA MIL-PRF-3835 AS27C256 code eprom smd
Contextual Info: UVEPROM AS27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • -55C to 125C operation

5962-8606301XA

Contextual Info: UVEPROM AS27C256 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • -55C to 125C operation • MILITARY Processing Methods

5962-8764802XA

Abstract: 5962-8764803XA SMJ27C512-25JM 5962-8764801XA SMJ27C512 SMJ27C512-15JM SMJ27C512-20JM
Contextual Info: UVEPR OM UVEPROM SMJ27C512 Austin Semiconductor, Inc. 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648

SMD MARKING CODE A12

Abstract: SMD MARKING CODE A10 SMJ27C512 SMJ27C512-15JM 59628764801XA marking code a8 SMD 5962-8764802XA
Contextual Info: UVEPROM SMJ27C512 AS27C512 Austin Semiconductor, Inc. 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648

5962-8606301XA

Abstract: 27C256 General Semiconductor 5962-8606305X 5962-8606309XA AS27C256 27C256-12 27C256-15 AM27C256 5962-8606305YA 5962-8606318XA
Contextual Info: UVEPROM AS27C256 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • -55C to 125C operation • MILITARY Processing Methods

27C256-12

Abstract: 27C256-15 AM27C256
Contextual Info: UVEPROM AS27C256A Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • -55C to 125C operation

5962-8606301XA

Abstract: 5962-8606301 5962-8606305XA UVEPROM 5962-8606302XA SMD MARKING CODE A12 General Instrument 27c256 SMJ27C256-25JM code eprom smd smd code a12
Contextual Info: UVEPROM SMJ27C256 AS27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063

5962-8764802XA

Abstract: 5962-8764803XA 5962-8764801XA SMJ27C512 SMJ27C512-15JM SMJ27C512-20JM SMJ27C512-25JM 59628764801XA
Contextual Info: UVEPROM SMJ27C512 Austin Semiconductor, Inc. 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648 • MIL-STD-883

UVEPROM

Abstract: SMJ27C512 marking code EA SMD 5 pins 5962-8764801XA
Contextual Info: UVEPROM SMJ27C512 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648 • MIL-STD-883 FEATURES •

5962-8606301XA

Abstract: SMJ27C256 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256-30JM SMJ27C256-17JM
Contextual Info: UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063 • MIL-STD-883

Contextual Info: D S 1647/D S1647P PRELIMINARY DALLAS SEMICONDUCTOR DS1647/D S1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • Integrated NV SRAM, real time clock, crystal, powerfail control circuit and lithium energy source

5962-8764802XA

Abstract: SMJ27C512-15JM 5962-8764801XA SMJ27C512-25JM 5962-8764803XA SMJ27C512 SMJ27C512-20JM smd code marking A8 smj27c512-15 59628764801XA
Contextual Info: UVEPROM SMJ27C512 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648 • MIL-STD-883 FEATURES •

OSC1 1

Contextual Info: 1.2 Internal Block Diagram Port A Port B Port C WDT x 2 channels PC7/A7 PC6/A6 PC5/A5 PC4/A4 PC3/A3 PC2/A2 PC1/A1 PC0/A0 Port 3 ROM mask ROM, flash memory PB7/A15/TIOCB5 PB6/A14/TIOCA5 PB5/A13/TIOCB4 PB4/A12/TIOCA4 PB3 / A11/TIOCD3 PB2/A10/TIOCC3 PB1/A9/TIOCB3

HC11A8

Abstract: MC68HC11
Contextual Info: Order this document by EB286/D Motorola Semiconductor Engineering Bulletin EB286 C Macro Definitions for the MC68HC11A8/A7/A1/A0 By By John Bodnar Austin, Texas Introduction With more microcontroller users moving to high level languages like C, macro definition files like the one outlined in this document can speed

DS1646-150

Abstract: DS9034PC DS1646 DS1646P DS164XP DS9034PCX
Contextual Info: DS1646/DS1646P DS1646/DS1646P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source • Clock registers are accessed identical to the static

DS1646

Abstract: DS1646P DS164XP DS9034PCX
Contextual Info: DS1646/DS1646P DS1646/DS1646P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source • Clock registers are accessed identical to the static

smd 3y3

Abstract: SMD K22 smd 1a2 RCA 2A3 JB16 smd 2a3 AL300 AVDD300 DVDD300 6 pin mini din lcd
Contextual Info: A B C D E 14.318MHz Opt AVDD300 DVDD300 Y1 10uh(Opt) VDOUT[15:0] 3 U2 2 20 22 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 O1 O2 O3 O4 O5 O6 O7 O8 ROMD0 ROMD1 ROMD2 ROMD3 ROMD4 ROMD5 ROMD6 ROMD7 VDOUT7 VDOUT6 VDOUT5 VDOUT4 VDOUT3 VDOUT2 VDOUT1 VDOUT0