A DBM HMF NO Search Results

Contextual Info: SAMSUNG ELECTRONICS INC ÍE H A R R IS 7TbmM2 DOiiaab t i ? bOE HMF-24030 -200 Power Optimized GaAs FET 2-10 GHz PRODUCT DATA Features • +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers

HMF-0600

Abstract: HMF-06000
Contextual Info: S A M S U N G E L E C T R O N I C S INC 33 HARRIS bDE J> 7^4142 0G11Ô3D T73 HMF-06000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features * +24.5 dBm Output Power with 8 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

hmf-0302

Abstract: HMF0302
Contextual Info: HARRIS MU S E M I C O N D U C T O R Jgj H A R R I S HbE D • 43D22bS OOOOlflT 5 ■ H M S HMF-03020 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers

HMP-220203

Contextual Info: H a r r is HMP-220203 Cascadable Low Noise Gain Block PRELIMINARY DATA SHEET October 1992 Features • Cascadable 50Q Gain Block with no External Components Required • Low Noise Figure: 2.2 dB Typical at 2.4 GHz • High Reverse Isolation • 3 dB Bandwidth of 1.8 to 3.0 GHz

HMP-130203

Contextual Info: HW 2 5 1993 HMP-130203 H a r r is Cascadable Low Noise Gain Block Single Bias Supply TARGET DATA SHEET April 1993 1 .8 -3.0GHz Features • Cascadable 500 .Gain Block • Single Bias Supply Operation • Low Power Dissipation for use in Battery Powered Applications

Contextual Info: HARRIS HMM-20310 Low TARGET DATA SHEET Noise A m p lifier 1.8 - 3.0 GHz AUGUST 1992 F e a tu re s •Low Noise Figure •On-Chip Gate R esistor Network •High R everse Is o latio n •Low Pow er D issipation for use In B attery Pow ered A pplications •DC Blocking o f Both R F Input

Contextual Info: AU 6 15 1992 35 HARRIS H M M -11130:%! X BAND GaAs MMIC POWER AMPLIFIER PRELIMINARY DATA SHEET May 1992 _ Features • High Output Power Capability for Driver or Power Stage Applications • Tl/Pt/Au Metallization Enhances Durability and Reliability

Contextual Info: SAMSUNG EL ECT RONICS INC bOE D • 7*^4142 0012GGD 07b MSIIGK -100 m h a f i f u s HMM-11130 -200 X BAND GaAs MMIC POWER AMPLIFIER PRELIMINARY DATA SHEET May 1992 Features • High Output Power Capability for Driver or Power Stage Applications * Tl/Pt/Au Metallization Enhances

HMP 110206

Abstract: mmic A
Contextual Info: ßpt- - i H M P - 1 10206 HARRIS Plastic Packaged Ga As MMIC A m plifier TARGET DATA SHEET JA NU ARY 1993 1.8 - 6 GHz F e a tu re s •DC B locking o f RF O utput •Low C ost P la stic Package S uitable fo r S urface M ount A p p lica tio n s •Tape-and-R eel O ptio n A v a ila b le

Contextual Info: SAMSUNG ELECTRONICS INC 33 H A R R IS bDE D • T'ibMmE GGllflTM 1^3 H M M - 1 0 5 1 0 GaAs MMIC Amplifier 2.6-5.2 GHz PRODUCT DATA Features • Versatility from Gain Stage to 100 mW Driver Applications Ti/Pt/Au Metallization and Large Gate Cross Section for Enhanced Reliability

8 905 958 460

Contextual Info: 2} HARRIS H M M -10410 GaAs MMIC Amplifier 2-4.2 GHz PRODUCT DATA Features • Versatility from Gain Stage to 100 mW Driver Applications Ti/Pt/Au Metallization and Large Gate C ro ss Section for Enhanced Reliability • On-Chip S ource Resistor Network for Easy

4526 ic

Abstract: m10610 10610
Contextual Info: SAMSUNG ELECTRONICS INC bGE D • 7 ^ 4 1 4 2 □Dllä'iä b3T «SMfiK HMM-10610 3 j HARRIS GaAs MMIC Amplifier 2 -6 GHz PRODUCT DATA Features • Versatility from Gain Stage to 100 m W Driver Applications * Ti/Pt/Au Metallization and Large Gate C ro ss Section for Enhanced Reliability

Contextual Info: SAIISUNG ELECTRONICS INC £0 HARRIS bOE H • T lb tltS OOllflSO 3 Ma H M M -10410 GaAs MMIC Amplifier 2-4.2 GHz PRODUCT DATA Features • Versatility from Gain Stage to 100 mw Driver Applications Ti/Pt/Au Metallization and Large Gate Cross Section for Enhanced Reliability

Contextual Info: HARRIS H M M -1 1810 GaAs MMIC Amplifier 6-18 GHz PRODUCT DATA SHEET Features * 50 tnW Output Power Capability for Driver Stage Applications • Ti/Pt/Au Metallization and Large Gate Cross Section for Enhanced Reliability * On-Chip Source Resistor Network for Easy Bias

Contextual Info: HARRIS H M M -11820 GaAs MMIC Amplifier 6-18 GHz PRODUCT DATA Features • Low DC Current Draw Provides High dB/mA Performance Ti/Pt/Au Metallization and Large Gate Cross Section for Enhanced Reliability • On-Chip Source Resistor Network for Easy Bias Point Selection

hy 1707

Contextual Info: SAMSUNG ELECTRONICS INC HARRIS büE D • TTbMlMS OOllllQ Tbb H S M 6 K H M M -1 1 8 2 0 GaAs MMIC Amplifier 6-18 GHz PRODUCT DATA Features • Low DC Current Draw Provides High dB/mA Performance • Ti/Pt/Au Metallization and Large Gate Cross Section fo r Enhanced Reliability

F30S60

Contextual Info: F30S64/F30S67 Monolithic Serial Interface CMOS CODEC/FILTER FA IR C H ILD A S chtum berger C om pany Preliminary Advanced Signal Processing Division Description Connection Diagram Top View The F30S64, F30S67 fam ily consists of /J-law and A-law m onolithic PCM C O D EC/FILTERS utilizing the A /D and

Contextual Info: Ordering number : ENN 6903 Bi-CMOS 1C SAfiYO LV23000M Single-Chip Tuner 1C for Radio/Cassette Players 00 Overview Package Dimensions T h e L V 2 3 0 0 0 M is a sin g le-ch ip tu n e r IC fo r ra d io /c a sse tte unit: m m p lay ers that p ro v id es F M , A M , M P X , an d P L L circu its. It