A/IC MARKING AOO Search Results

diodes B2V

Abstract: B50C marking 27.A STG-65 Thomson BZV BZV27 general semiconducteur thomson diodes
Contextual Info: L S G | s^c D S -T H O M S O N Q 7^23? aooasbD □ THOMSON-C5F * BZV27,A — BZV31,A DIVISION SEMICONDUCTEURS VOLTAGE REFERENCE DIODES TEMPERATURE COMPENSATED ^ D IO D E S D E R É F É R E N C E D E T E N S IO N ! C O M P E N S É E S E N T E M P É R A T U R E )

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

transistor 21Y

Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Contextual Info: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements

2SC4498

Abstract: 2SA1722
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

pa 2030a

Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

D240SC4M

Contextual Info: Schottky Barrier Diode Diode Module •¿m H OUTLINE D240SC4M 40V 240A Feature • High Io Rating-Module-PKG •« V • Low V f f • Small 9 je • 8 jcÖ ^/JV c^L' Main Use • High Power Switching Regulator • DC/DC Converter • Main Frame • IC Tester

INI615

Abstract: 1Nu5 1N1614 Diodes IC 4011 4011 IC 1N4A NASA Group MC 4011 B 1N1614 1N1614R
Contextual Info: MIL SPECS I C | 0 D D G 1 E S D0011S1 T | 7^0/-¡7 NOTICE OF VALIDATION INCH-POUND MIL-S-19500/162B NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R

a/ic marking aoo

Contextual Info: BCX71G PNP EPITAXIAL SILICON TRAN SISTO R G EN ER A L PU R PO SE TRAN SISTO R SO T-23 ABSO LU TE MAXIMUM RATINGS TA=25V Sym bol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Currant Collector Dissipation Storage Temperature

CMPD2836

Abstract: CMPD2838 marking code ca2 marking code C1 marking code c2 marKing CA2 sot-23
Contextual Info: Central” CMPD2836 CMPD2838 Sem iconductor Corp. DUAL SILICON SWITCHING DIODE DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CMPD2836, CMPD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy

transistor WL 431

Abstract: 2N700A BUV pnp 50a MW1131
Contextual Info: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,

mwab

Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

ILS 404 CB

Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

Contextual Info: RA D IA LI. MULTICONTACT CONNECTORS PRELIMINARY 620 600 430 TECHNICAL DATA SHEET SIZE 2 RECEPTACLE CONNECTOR SPL FORMATION INC Series NSX 30, 93 1 . 218 2 9 , 8 4 ( 1 . 175) 17 , 5 8 ( . 6 9 2 ) 16 , 9 7 ( . 6 6 8 ) 33,05(1.301) 32,94(1.297) 3 , 30( . 130)

Contextual Info: A COMPANY OF MODELS LPC-2516 and LPC-3019 Inductors <•" Surface Mount FEA TU R ES • • • • • • • • STA N D A R D E L E C T R IC A t S P E C IF IC A T lO N S MODEL LPC-2516 CORE TYPE A MIN IND. • Excellent coplanarity • Low OCR vs inductance

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

TRANSISTOR BL s93

Abstract: K1007
Contextual Info: 0. H . . ÿ » ; . . ‘ ••* • ".••• • •_ :?•: • . ■• • • I : • ' '• description 2. : QUALITY RATINGit-' . c o n t e n t s V 3. > ELLIOTT BART CODE NUMBER - 4* MECHANICAL DIMENSIONS & OUTLINES 5* MARKING 6« WEIGHT ABSOLUTE MAXIMUM RATING

c 2579 power transistor

Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Contextual Info: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage

intel mark 164997

Abstract: PCM45F c623 marking UL1439
Contextual Info: NOTES: 1, CLIP MUST STAY ATTACHED TD HEATSINK 2. CLIP SHDULD NDT BE ABLE TD ROTATE 360 DEGREES AFTER CRIMPING PRDCESS, 3. CRIMPING FEATURES SHDULD BE EQUAL DISTANCE FRDM CENTERLINE DF HEATSINK, 4, TD LERANCEi U N LESS OTHERW ISE S P E C IF IE D Ld IC PI >m

marking LV4

Contextual Info: HS5A - HS5M tò RoHS C O M P L IA N C E 5.0 AMPS. High Efficient Surface Mount Rectifiers SMC/DO-214AB n “ F | 363 rr Features •a< r •> ❖ <f ■> <f ■> <■ G la s s p a s s iv a te d ju n c tio n c h ip . F o r s u rfa c e m o u n te d a p p lic a tio n

BJ79

Abstract: MIL-STO-454
Contextual Info: DATA d K T A M B XM TW S O J U B f f I t i w k i h i m c t h m i c s in c . AND SHALL «IT K OISOOSCD, O P IH J m UHO — — •-rr o i n a m fa c H i - -M PCMXSSXON. m m er/m w NOTES: 1. 9. PART DESCRIPTION! 2. 30 5 -0592 Ish ic 9ATgBCI TTT

irf P 611

Contextual Info: £ ÿ j SCS-THOMSON í« IL[ieTIEI©MíES BYW 81-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES . VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES • LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY ■ THE SPECIFICATIONS AND CURVES EN­

Datecode nl

Abstract: marking code nt R20 marking SRAS820 RPB 202
Contextual Info: TAIWAN SEM ICONDUCTO R s ' ;p b . SRAS820 - SRAS8150 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers D*PAK RoHS COMPLIANCE $ .insidi H -fS sf« *— •M S ll.lo 'i W iM ii Features -v-Y- 4«• I ja s s v s A i; For s urface mou nted a ppl icatio n Ideal for automated pick & place

Contextual Info: MODEL DFM14 Thick Film Resistor Networks M ilita ry , M IL -R -8 3 4 0 1 Q u a lifie d , T y p e RZ 1 1 , 1 2 , 1 5 S c h e m a tic s FEA TU R ES • 11, 12, 15 Schematics; hot-solder dipped • MIL-R-83401 qualified • Highly stable thick film • TCR available in "K" ± 100PPM/°C or ”M" (± 300PPM7C) characteristic