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    ZC2800 Price and Stock

    Diodes Incorporated ZC2800ETA

    DIODE SCHOTTKY 70V 15MA SOT23-3
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    DigiKey ZC2800ETA Cut Tape
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    Zetex / Diodes Inc ZC2800ETA

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    Bristol Electronics ZC2800ETA 1,850
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    ZC2800ETA 91
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    Quest Components ZC2800ETA 2,176
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    ZC2800ETA 1,480
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    ZC2800ETA 259
    • 1 $0.711
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    ZC2800ETA 90
    • 1 $2.4364
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    ZC2800ETA 87
    • 1 $1.25
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    Zetex / Diodes Inc ZC2800

    SCHOTTKY BARRIER DIODE
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    New Advantage Corporation ZC2800 705 1
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    ZC2800 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZC2800 Zetex Semiconductors DOIDE SCHOTTKY 70V 0.015A 2TO-92 Original PDF
    ZC2800 Zetex Semiconductors SCHOTTKY BARRIER DIODES Original PDF
    ZC2800 Zetex Semiconductors SCHOTTKY BARRIER DIODES Original PDF
    ZC2800 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZC2800 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
    ZC2800 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    ZC2800 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    ZC2800 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ZC2800 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZC2800C Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
    ZC2800C Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    ZC2800C Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ZC2800E Zetex Semiconductors SOT23 SCHOTTKY BARRIER DIODE Original PDF
    ZC2800E Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
    ZC2800E Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZC2800E Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZC2800E-E6 Zetex Semiconductors DIODE SCHOTTKY DIODE 70V 0.015A 3SOT-23 Original PDF
    ZC2800ETA Diodes Incorporated Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTKY 70V 0.015A SOT23-3 Original PDF
    ZC2800H Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF

    ZC2800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZC2800E

    Abstract: MV SOT23 ZC2811E ZC5800E DSA003721
    Text: ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6 ZC2811E – E8 ZC5800E – E9 0.6 I =10mA


    Original     		PDF ZC2800E ZC2811E ZC5800E ZC2811E) ZC2800E MV SOT23 ZC2811E ZC5800E DSA003721

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL


    Original     		PDF BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E

    IR 3109

    Abstract: ZC2800 ZC2811 ZC5800
    Text: ZC2800 ZC2811 ZC5800 ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION TYPICAL CHARACTERISTICS 0.8 0.8 0.6 CATHODE 0.6 I =10mA 1 ANODE 2 I =10mA F F 0.4 E-Line TO92 Compatible 0.4 I =1.0mA F I =1.0mA ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZC2800 ZC2811 ZC5800 ZC2800 ZC2811 IR 3109 ZC5800

    BAT54A

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6


    Original     		PDF BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E BAT54A

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


    OCR Scan     		PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 ZC2800-ZC5800 ZC830A ZC831A ZC832A ZC833A

    zc825

    Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
    Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


    OCR Scan     		PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 capac832A zc825 ZC830A ZC831A ZC832A

    SOT-23 LOA

    Abstract: ZC2800 ZC2811 ZC2800E ZC2810 ZC5800 ZCI2811 LOA SOT23 ferranti
    Text: FERRANTI semiconductors ZC2800 ZC2810 ZC2811 ZC5800 S c h o ttk y Barrier D iodes NOT TO SCALE FEATURES • Available in three packages: Economical Plastic E-line M icro m in iatu re SOT-23 High R eliability Glass DO-35 • Low Leakage Current • Low Forward Voltage


    OCR Scan     		PDF ZC2800 ZC2810 ZC2811 ZC5800 OT-23 DO-35 Q05min ZC2800H, ZC2810H, SOT-23 LOA ZC2800E ZC5800 ZCI2811 LOA SOT23 ferranti

    Untitled

    Abstract: No abstract text available
    Text: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES IS S U E 2 - M A R C H 94 DIODE PIN CONNECTION t — M- CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Power Dissipation at T amb= 25°C Ptot Operating and Storage Temperature Range ZC2800,ZC2811,ZC5800


    OCR Scan     		PDF ZC2800 ZC2811 ZC5800 ZC2800 ZC2811

    Untitled

    Abstract: No abstract text available
    Text: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES SSUE 2 - MARCH 1995 O DIODE PIN CONNECTION ii PARTM ARKING DETAIL ZC2800E - E6 ZC2811E - E8 ZC5800E - E9 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L P o w e r D is s ip a tio n at T amb= 25‘>C P .o t


    OCR Scan     		PDF ZC2800E ZC2811E ZC5800E ZC5800E

    zc sot23

    Abstract: ZC2810E
    Text: ZC2800E ZC2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 ZC2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT


    OCR Scan     		PDF ZC2800E ZC2811E ZC2810E ZC5800E ZC5800E 2800E 2810E zc sot23

    Untitled

    Abstract: No abstract text available
    Text: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C


    OCR Scan     		PDF ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E-E8 ZC5800E-E9

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current


    OCR Scan     		PDF 7E50533 ZC2800Er ZC2810E ZC2811E ZC5800E ZC2800E

    RA SOT323

    Abstract: No abstract text available
    Text: ZUMD70-04 ZUMD70-05 SOT323 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES ISSUE 1 - NO VEMBER 1998 Q_ 1 1 M M 3 2 2 3 SERIES PAIR COMMON CATHODE Device Type: ZUMD70-04 Device Type: ZUMD70-05 Partm arking Detail: D94 Partmarking Detail:


    OCR Scan     		PDF OT323 ZUMD70-04 ZUMD70-05 ZUMD70-05 ZC2800E RA SOT323

    ZC3202

    Abstract: ZC3201 ZC32 ZC30 ZC3001 BBY20 BBY17 ZC202 ZC29 BBY18
    Text: SILICON DIODES Variable Capacitance Tuning Diodes Type volts Max. !r at 80v |*A BBY17 BBY18 BBY19 BBY20 BBY21 BBY22 100 100 100 100 100 100 0 2 0-2 0-2 02 0-2 0-2 Max. Vr *±20% tolerance Nominal C T* at V R = 4v, f=1M H z pF: 3 8 10 15 22 33 47 Type ZC700


    OCR Scan     		PDF C2/C100i BBY17 BBY18 BBY19 BBY20 BBY21 BBY22 DO-14 C2/C30Ã ZC3001 ZC3202 ZC3201 ZC32 ZC30 ZC202 ZC29

    Diode Marking z3 SOT-23

    Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
    Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAR99 OT-23 BAR99 C9/C20 50MHz ZC830A ZC831A ZC832A Diode Marking z3 SOT-23 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


    OCR Scan     		PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    C6V2 ST

    Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
    Text: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAV74 OT-23 BAV74 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A C6V2 ST FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BZX84-C43

    BAV70-A4

    Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
    Text: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


    OCR Scan     		PDF BAV70 OT-23 BAV70 C9/C20 50MHz ZC830A ZC831A ZC832A BAV70-A4 Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


    OCR Scan     		PDF OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70

    ZC2800

    Abstract: E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E
    Text: SCH OTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.


    OCR Scan     		PDF OT-23 ZC2800 ZC2810 10fiA ZC2811 ZC5800 E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E

    ZC825 SOT-23

    Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V


    OCR Scan     		PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC825 SOT-23 diode marking w8 marking Z6 ZC803 ZC804

    ZC800

    Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 ZC82
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V


    OCR Scan     		PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC803 ZC804 ZC823 ZC82