Z25FG Search Results

Z100FG

Abstract: Z25FG Z50FG
Contextual Info: Z25FG Z50FG Z100FG 2,500 V - 10,000 V Rectifiers 0.50 A - 1.5 A Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current

Z100FG

Abstract: Z25FG Z50FG
Contextual Info: Z25FG Z50FG Z100FG 2,500 V - 10,000 V Rectifiers 0.50 A - 1.5 A Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current

Contextual Info: Z25FG Z50FG Z100FG 2,500 V - 10,000 V Rectifiers 0.50 A - 1.5 A Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current

Contextual Info: Z15FG Z20FG Z25FG HIGH VOLTAGE RECTIFIERS 200nS RECOVERY y AXIAL LEADED HERMETICALLY SEALED = 1500-2500V = 1-5A , T rr in. mm .350(8.89) • Max. = 200nS 1.00(25.4) Min. .215(5.5) Max. ■040±.003 (1,02±,08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS

Z25FG

Abstract: 125 jl diode do-201
Contextual Info: TH97/2478 Z25FG TH09/2479 IATF 0060636 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODE PRV : 2500 Volts Io : 1.5 Ampere DO-201 FEATURES : * * * * * * * Glass passivated junction chip High current capability High surge current capability High reliability Low reverse current

X200UFG

Contextual Info: HIGH VOLTAGE RECTIFIERS 100ns-200ns Recovery • Axial Leaded • Hermetic ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current 1 (b) (Vrwm) 55°C 100°C mA mA Volts Reverse Current @ Vrwm Forward Voltage

1N6515US

Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,

sharp laser diodes

Abstract: OC100G
Contextual Info: Table of Contents PAGE SURFACE MOUNT MOLDED DIODES 30ns 420mA, 2000V . 08 - 09 70ns 50mA - 250mA, 150mA - 500mA, 2000V - 5000V .

X200SG

Abstract: Z100SG 1N6521U
Contextual Info: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000

Contextual Info: 2,500 V -10,000 V Rectifiers 0.50 A -1.5 A Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED m u Part Working Number Reverse mm Junction 1 Cycle Repetitive Reverse Thermal Surge Cap. Impedance Surge Recovery Current Current Time Voltage

Contextual Info: High Voltage Diodes - Axial Lead 300mA - 1500mA • 200ns • Hermetic ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1) 100°C(2) 25°C 100°C