1N6515US
Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,
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MIL-PRF-19500/575D
MIL-PRF-19500/575C
1N6512
1N6519,
1N6512US
1N6519US,
MIL-PRF-19500.
1N6515US
1N6513US
1N6517
JV6512
1N6517US
1N6519
z15u
Z60UFG
Z100UFG
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z15u
Abstract: Z15UF
Text: Z15UF Z20UF Z25UF HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 100nS RECOVERY V RWM AXIAL LEADED RR in. mm 1500-2500V = 1.0A = 100nS •200±.015 (5.08±.38) .250+.015 (6.35±.38) ~ j - 1- r ■060±.003 (1,52±.06) .40(10.16) Min. T ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
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100nS
Z15UF
Z20UF
Z25UF
500-2500V
100nS
50VDC
Z25UF
z15u
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Z15UFG
Abstract: No abstract text available
Text: HIGH VOLTAGE RECTIFIERS 100nS RECOVERY Z15UFG Z20UFG Z25UFG AXIAL LEADED H ER M ETIC A LLY SEALED \j = 1500-2500V , = -, 5A T rr in. mm = 100nS 1.00(25.4) Min. .350(8.89) Max. Q .215(5.5) Max. •040±.003 (1.02+.08) ELECTR IC A L C H A R A C TE R IS TIC S A N D M A X IM U M RAT NGS
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100nS
Z15UFG
Z20UFG
Z25UFG
500-2500V
100nS
Z25UFG
100-C
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