WTC3401 Search Results
WTC3401 Datasheets Context Search
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Contextual Info: WTC3401 P-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT -4.2 AMPERES 1 DRAIN SOURCE VOLTAGE GATE -30 VOLTAGE 2 SOURCE Features: 3 *Advanced trench process technology *High Density Cell Design For Ultra Low On-Resistance Maximum Ratings TA=25℃ |
Original |
WTC3401 OT-23 03-Sep-2013 OT-23 |