WTC2301 Search Results
WTC2301 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
WTC2301 | Weitron | P-Channel Enhancement Mode Power MOSFET | Original |
WTC2301 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
WTC2301Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V *Rugged and Reliable |
Original |
WTC2301 OT-23 OT-23 250uA 29-Mar-10 WTC2301 | |
MOSFET 2301 SOT-23
Abstract: 2301 marking sot-23 WTC2301
|
Original |
WTC2301 OT-23 OT-23 12-May-05 MOSFET 2301 SOT-23 2301 marking sot-23 WTC2301 | |
Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable |
Original |
WTC2301 OT-23 OT-23 12-May-05 | |
sot23 nc marking
Abstract: WTC2301
|
Original |
WTC2301 OT-23 OT-23 12-May-05 sot23 nc marking WTC2301 | |
WTC2301Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V *Rugged and Reliable |
Original |
WTC2301 OT-23 OT-23 250uA 20-Aug-09 WTC2301 |