WTC2301
Abstract: No abstract text available
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V *Rugged and Reliable
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WTC2301
OT-23
OT-23
250uA
29-Mar-10
WTC2301
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MOSFET 2301 SOT-23
Abstract: 2301 marking sot-23 WTC2301
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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WTC2301
OT-23
OT-23
12-May-05
MOSFET 2301 SOT-23
2301 marking sot-23
WTC2301
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Untitled
Abstract: No abstract text available
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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PDF
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WTC2301
OT-23
OT-23
12-May-05
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sot23 nc marking
Abstract: WTC2301
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERS * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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Original
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PDF
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WTC2301
OT-23
OT-23
12-May-05
sot23 nc marking
WTC2301
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WTC2301
Abstract: No abstract text available
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V *Rugged and Reliable
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Original
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PDF
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WTC2301
OT-23
OT-23
250uA
20-Aug-09
WTC2301
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