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Winbond Electronics Corp W982516AH-7 3.3V 133MHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	W982516AH-7 3.3V 133MHZ		16			1 - 10 - 100 - 1000 - 10000 -	Get Quote

W982516AH Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
W982516AH		Winbond Electronics	SDRAM 16Mx16		Original	PDF
W982516AH-7		Winbond Electronics	4M x 4 BANKS x 16 BIT SDRAM		Original	PDF
W982516AH-75		Winbond Electronics	DRAM Chip, SDRAM, 32MByte, 3.3V Supply, Commercial, TSOP II, 54-Pin		Original	PDF
W982516AH75L		Winbond Electronics	4M x 4 Banks x 16-Bit SDRAM		Original	PDF
W982516AH-75L		Winbond Electronics	DRAM Chip, SDRAM, 32MByte, 3.3V Supply, Commercial, TSOP II, 54-Pin		Original	PDF
W982516AH-8H		Winbond Electronics	DRAM Chip, SDRAM, 32MByte, 3.3V Supply, Commercial, TSOP II, 54-Pin		Original	PDF

W982516AH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: W982516AH 4M x 4 BANKS × 16 BIT SDRAM GENERAL DESCRIPTION W982516AH is a high-speed synchronous dynamic random access memory SDRAM , organized as 4M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W982516AH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the	Original	PDF	W982516AH W982516AH PC133/CL2 PC133/CL3 PC100/CL2
W982516AH Abstract: W982516AH-7 W982516AH-75 W982516AH75L W982516AH-8H Text: W982516AH 4M x 4 BANKS × 16 BIT SDRAM GENERAL DESCRIPTION W982516AH is a high-speed synchronous dynamic random access memory SDRAM , organized as 4M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W982516AH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the	Original	PDF	W982516AH W982516AH PC133/CL2 PC133/CL3 PC100/CL2 W982516AH-7 W982516AH-75 W982516AH75L W982516AH-8H
W83C553F-G Abstract: quality and reliability report W83977TF W83C43 W9925QF CMOS SPDM Process JEDEC-STD-78 0.6 um cmos process 8 bit uC w78c32BP Text: Quality and Reliability Report 6. Process Related Reliability Test Data Dynamic Early Fail Study EFR 1. Test Condition Condition: Dynamic operating condition with Vcc = 4.6V for 3.3V products, T = 125°C, f = 0.8 MHz/125 KHz for synchronous DRAMs Dynamic operating condition with Vcc = 6.5V/4.3V for 5V/3.3V products, T = 125°C, f = 1 MHz/100	Original	PDF	Hz/125 Hz/100 W9925QF) W9920IF) W83C553FG W83977TF W83877F W91340 W9910IF) W83C553F-G quality and reliability report W83977TF W83C43 W9925QF CMOS SPDM Process JEDEC-STD-78 0.6 um cmos process 8 bit uC w78c32BP
Hynix Cross Reference Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T	Original	PDF	W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v