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    Excelitas Technologies Corporation VTB9412H

    SENSOR PHOTODIODE 920NM 2DIP MOD
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    Excelitas Technologies Corporation VTB9412BH

    SENSOR PHOTODIODE 580NM 2DIP MOD
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    Excelitas Technologies Corporation VTB9413BH

    SENSOR PHOTODIODE 580NM 2DIP MOD
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    Excelitas Technologies Corporation VTB9413B

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    Bristol Electronics VTB9413B 1,000
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    VTB941 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB9412 PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB9412 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9412 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412B PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB9412B EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9412B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412BH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE UHDKRES 6MM CER IR Original PDF
    VTB9413 PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB9413 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9413 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9413 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9413B PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB9413B EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9413B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9413B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9414 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9414 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9414B EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF

    VTB941 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTB9412

    Abstract: VTB9413
    Text: VTB Process Photodiodes VTB9412, 9413 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original
    PDF VTB9412, VTB9412 VTB9413 VTB9412 VTB9413

    VTB9412BH

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package


    Original
    PDF VTB9412BH, 9413BH VTB9412BH VTB9413BH VTB9412BH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package


    Original
    PDF VTB9412BH, 9413BH VTB9412BH VTB9413BH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original
    PDF VTB9412H, 9413H VTB9412H VTB9413H

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These


    Original
    PDF VTB9412B, 9413B VTB9412B VTB9413B

    9413H

    Abstract: rsh8
    Text: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original
    PDF VTB9412H, 9413H VTB9412H VTB9413H 9413H rsh8

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB9412, 9413 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original
    PDF VTB9412, VTB9412 VTB9413

    9413B

    Abstract: VTB9412B VTB9413B
    Text: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These


    Original
    PDF VTB9412B, 9413B VTB9412B VTB9413B 9413B VTB9412B VTB9413B

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original
    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original
    PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


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    PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: VTB9412B, 9413B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20F Sm all area planar silicon photodiode in a recessed ceram ic package. The package incorporates an infrared re­ jection filter. These diodes have very high shunt resistance and good blue


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    PDF VTB9412B, 9413B VTB9412B VTB9413B

    Untitled

    Abstract: No abstract text available
    Text: Sb E D 3D3 0b CH O D O l OS b G ib HVCT VTB941 5, 9416 VTB Process Photodiodes E fi & G VACTE C T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of


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    PDF VTB941 T-41-51 VTB9415 VTB9416

    9416B

    Abstract: VTB9415B VTB9416B
    Text: SLE o o o i o s a T= n D VTB9415B, 9416B VTB Process Photodiodes E 6 & I VCT T-41-5 1 G VACTEC PACKAGE D IM EN SIO N S inch mm CASE 20F PRODUCT DESCRIPTIO N Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejec­


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    PDF VTB9415B, 9416B T-41-51 CASE20F 7x1013 8x1013 9416B VTB9415B VTB9416B

    Vactec

    Abstract: VTB9415 VTB9416
    Text: SbE D 3030bCH 000105b Dlb M V C T VTB Process Photodiodes VTB9415, E G & G VACTEC 9416 T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planarsilicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of


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    PDF 3030bCH VTB941 T-41-51 VTB9415 VTB9416 x1013 8x1013 Vactec VTB9415 VTB9416

    VTB9412B

    Abstract: VTB9413B VTB9414B
    Text: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in


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    PDF 3030bDT 0001DS7 VTB9412B, T-41-51 VTB9412B VTB9413B VTB9414B x1013 VTB9412B VTB9413B VTB9414B

    Untitled

    Abstract: No abstract text available
    Text: SbE D BDBDbD^ QGD1055 IflT H V C T VT B 9 4 1 2 VTB Process Photodiodes E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes offer very


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    PDF QGD1055 Cto75Â VTB9412

    TB505

    Abstract: No abstract text available
    Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have


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    PDF 365nm, at220nm. VTS2011 VTS20â TB505

    9413B

    Abstract: VTB9413B VTB9412B
    Text: V T B 9 4 1 2 B , 9413B VTB Process Photodiodes I PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared re­


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    PDF VTB9412B, 9413B VTB9412B 9413B VTB9413B VTB9412B

    Untitled

    Abstract: No abstract text available
    Text: SbE ]> • 3 0 3 0 b 0 T 0001DS7 TSS M V C T V TB 9 4 1 2B , 3B, 4B VTB Process Photodiodes E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20 F PRODUCT DESCRIPTION Small area planarsilicon photodiode in a recessed ceramic package. The package incorporates an infrared rejec­


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    PDF 0001DS7 T-41-51 VTB9414B VTB9413B VTB9412B

    VTB9415B

    Abstract: VTB9416B k420 9416B x-1015 K4-20
    Text: SbE D BOBGLG'i OÜGlOSfl * W VTB Process Photodiodes HVCT V T B 9 4 1 5 B , 9 4 16B E: 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceram ic package. The packageincorporatesan infrared rejec­


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    PDF VTB9415B, 9416B T-41-51 VTB9415B VTB9416B 7x1013 VTB9415B VTB9416B k420 9416B x-1015 K4-20

    5041J

    Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
    Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with


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    PDF 365nm, at220nm. 100mW/cm' 200mW/cmJ 5041J photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B

    VTB9412

    Abstract: VTB9413
    Text: VTB Process Photodiodes V T B 9 4 1 2, 9413 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes offer very high shunt resistance and good blue


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    PDF VTB9412, VTB9412 VTB9413 303DbGc1 VTB9412 VTB9413