VPDQ20 Search Results

vp2020l

Abstract: IC 6201
Contextual Info: VPDQ20 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • VP2020L, BSS92 Single Chip • Available as VPDQ1CHP DEVICE TYPICAL CHARACTERISTICS 6-198 O u tp u t C h a ra cte ristics O hm ic Region C h a ra c te ris tic s V DS (V) V DS (V)

Contextual Info: J ffiS S b VP2020L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V yp -2 0 0 20 V (BR)DSS TO-92 (TO-226AA) BOTTOM VIEW •d (A) - 0 .1 2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDQ20 3 1 ABSOLUTE MAXIMUM RATINGS (TA 25°C Unless Otherwise Noted)

TP2020L

Contextual Info: TP1220L, TP2020L P-Channel Enhancement-Mode MOS Transistors_ _ PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS PART NUMBER rDS<ON) (Ù ) •d (A) TP1220L -120 20 -0.12 TP2020L -200 20 -0.12 BOTTOM VIEW (tT ? ) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDQ20

p-channel mosfet bss92

Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
Contextual Info: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5

BSS92

Abstract: TP1220L TP2020L VP2020L TP/VP2020L
Contextual Info: TP1220L, TP/VP2020L, BSS92 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L -120 20 @ VGS = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGS = -4.5 V -1 to -2.4 -0.12

BSS92

Abstract: marking s92 VP2020L 2020L S0427
Contextual Info: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15

TP2020L

Abstract: bss92 VP2020L TP1220L
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4

VP2020

Abstract: vp2020l
Contextual Info: SILICONIX INC ÔSS473S 1ÛE D 0ümi2S VP2020 SERIES C7SiRcc3nix J.Æ P-Channel Enhancement-Mode MOS Transistors in c o rp o ra te d " T -3 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER Ö V BR DSS fDS(ON) (fl) (V) >D (A) PACKAGE TO-2Q6AC (TO-52)

BSS92

Abstract: TP2020L TP1220L VP2020L
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4

TP2020L

Abstract: VP2020L BSS92 TP1220L TF1725
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number n>S on M a x (Q ) VGS(th) (V) I d (A ) TP1220L -120 20@ VGs = -4 .5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGs -1 to -2.4 -0.12 VP2020L -200 20@ Vg s = -4 .5 V

Contextual Info: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V

bss92

Abstract: VP2020L 2020L
Contextual Info: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15

vp2020l

Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4

Contextual Info: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)

Contextual Info: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0

vp2020l

Abstract: BSS92
Contextual Info: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15