VNDQ1
Abstract: 1206L VN1206L
Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,
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VN1206L
O-226AA
18-Jul-08
VNDQ1
1206L
VN1206L
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VN1210M
Abstract: VN1206M VN1206L
Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M
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VN1206L/M,
VN1210M
VN1206L
VN1206M
O-226AA)
P-38211--Rev.
15-Aug-94
VN1210M
VN1206M
VN1206L
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VN1206L
Abstract: VN1210M VN1206M
Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M
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VN1206L/M,
VN1210M
VN1206L
VN1206M
O-226AA)
P-38211--Rev.
15-Aug-94
VN1206L
VN1210M
VN1206M
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1206L
Abstract: VN1206L
Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,
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VN1206L
O-226AA
O-226AA)
S-04279--Rev.
16-Jul-01
1206L
VN1206L
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Untitled
Abstract: No abstract text available
Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,
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VN1206L
O-226AA
1206L
08-Apr-05
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VN1206L
Abstract: VN1206M VN1210M
Text: VN1206L/M, VN1210M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN1206L VN1206M 1 120 VN1210M rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V
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VN1206L/M,
VN1210M
VN1206M
VN1206L
O226AA)
P-38211--Rev.
VN1206L
VN1206M
VN1210M
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VN1210M
Abstract: VN1206L VN1206M
Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M
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VN1206L/M,
VN1210M
VN1206L
VN1206M
O-226AA)
P-38211--Rev.
15-Aug-94
VN1210M
VN1206L
VN1206M
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VN1206L
Abstract: No abstract text available
Text: VN1206L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS
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VN1206L
O-226AA
O-226AA)
S-00591--Rev.
03-Apr-99
VN1206L
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VN1206M
Abstract: No abstract text available
Text: VN 1206 SERI ES N-Channel Enhancement-Mode MOS Transistors B'SSSSSS PRODUCT SUMMARY PART NUMBER V BRJDSS VN1206L VN1206M r DS(ON •d (A) (A) PACKAGE 120 6 0.23 TO-92 120 6 0.26 TO-237 3 DRAIN TO-237 BOTTOM VIEW Performance Curves: VNDQ12 Jet* 1 SOURCE 2 GATE
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VN1206L
VN1206M
O-237
VNDQ12
VN1206M
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vn1210m
Abstract: No abstract text available
Text: am & SS VNDQ12 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-237 • VN1206M, VN1210M Single TO-92 TO-226AA • VN1206L, VN1210L, TN1206L Single Chip • Available as VNDQ4CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive
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VNDQ12
O-237
VN1206M,
VN1210M
VN1206L,
VN1210L,
TN1206L
O-226AA)
VNDQ12
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VN1210L
Abstract: No abstract text available
Text: VN1210 SERIES N-Channel Enhancement-Mode MOS Transistors TO -92 TO-226AA B O T T O M VIEW PRODUCT SUMMARY VN1210L 120 VN1210M Q V (BR)DSS (V) la PA R T N UM BER >D (A) PACKAGE 10 0.18 TO-92 120 10 0.20 TO-237 Performance Curves: VNDQ12 2 GATE 3 DRAIN TO-237
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VN1210
O-226AA)
VN1210L
VN1210M
O-237
VNDQ12
1210L
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Untitled
Abstract: No abstract text available
Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V (B R )D S S Min (V) 120 TD S (on) M a x ( Q ) VoS(th) (V) Id (A) 6 a vGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 3.8 Q • Low Threshold: 1.4 V • Low Input Capacitance: 35 pF
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VN1206L
1206L
S-04279--
16-Jul-01
O-226AA)
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VN46AFD
Abstract: VNDQ1 vnd02 TD1001 VN46AF
Text: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)
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TN0201L,
TN0401L
VN0300L,
VN0300M
VQ1001J/P
VNDQ03
TD1001Y
TQ1001J
VN46AFD
VNDQ1
vnd02
TD1001
VN46AF
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Untitled
Abstract: No abstract text available
Text: T em ic smcons_ VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber : VV BR DSS Min (V) VN1206L VN1206M 120 VN1210M Features Benefits • • • • • • • • • • Low On-Resistance: 3.8 Q
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VN1206L/M,
VN1210M
VN1206L
VN1206M
VN1210M
P-38211--Rev.
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3821J
Abstract: No abstract text available
Text: Tem ic VN1206L/M, VN1210M Se m i c f l n d u c K i r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V ) r DS(on) VN1206M Vcs(ih)(V) I d (A ) 0.8 to 2 0.23 6 @ V o s - 10 V 0.8 to 2 0.26 10 @ V q s = 2.5 V 0.8 to 2
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VN1206L/M,
VN1210M
1206L
VN1206M
VNI21QM
P-38211--
15-Aug-94
O-226AA)
3821J
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