VHC112 Search Results

HC112M

Contextual Info: I R C H I L D S E M I C O N D U C T O R TM VHC112 Dual J-K Flip-Flops with Preset and Clear General Description The VHC112 is an advanced high speed C M OS device fa b ­ ricated w ith silicon gate C M OS technology. It achieves the high-speed operation sim ilar to equivalent Bipolar Schottky

"J-K Flip flops"

Abstract: 74HC112 74VHC112 74VHC112M 74VHC112MTC 74VHC112SJ M16A M16D MTC16 VHC112
Contextual Info: VHC112 Dual J-K Flip-Flops with Preset and Clear tm Features General Description • High speed: fMAX = 200MHz Typ. at VCC = 5.0V ■ Low power dissipation: ICC = 2µA (Max.) at TA = 25°C The VHC112 is an advanced high speed CMOS device fabricated with silicon gate CMOS technology. It

VHC112

Abstract: 74VHC112M 74HC112 74VHC112 74VHC112MTC 74VHC112N 74VHC112SJ M16A M16D MTC16
Contextual Info: Revised April 1999 VHC112 Dual J-K Flip-Flops with Preset and Clear General Description The VHC112 is an advanced high speed CMOS device fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.

Contextual Info: S E M I C O N D U C T O R tm VHC112 Dual J-K Flip-Flops with Preset and Clear General Description The VHC112 is an advanced high speed CMOS device fab­ ricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky

74HC112

Abstract: 74VHC112 74VHC112M 74VHC112MTC 74VHC112N 74VHC112SJ M16A M16D MTC16 VHC112
Contextual Info: VHC112 Dual J-K Flip-Flops with Preset and Clear General Description The VHC112 is an advanced high speed CMOS device fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.

VHC112

Abstract: 74HC112 74VHC112 74VHC112M 74VHC112MTC 74VHC112SJ M16A M16D MTC16
Contextual Info: S ; ^ r1 I Revised April 1999 E M IC O N D U C T G R T M General Description The VHC112 is an advanced high speed CMOS device fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissi­

Contextual Info: VHC112 Dual J-K Flip-Flops with Preset and Clear tm Features General Description • High speed: fMAX = 200MHz Typ. at VCC = 5.0V ■ Low power dissipation: ICC = 2µA (Max.) at TA = 25°C The VHC112 is an advanced high speed CMOS device fabricated with silicon gate CMOS technology. It

Contextual Info: A I R C H S eptem ber 1995 „ . „, Revised April 1999 I L D SEMICÜNDUCTÜRTM S im ultaneous LOW signals on PR and CLR force both Q and Q HIGH. General Description T h e VHC112 is an advanced high speed C M OS device fabricated with silicon gate C M OS technology. It achieves

vhc165

Abstract: TTL nand VHC16245 vhc08 toshiba 74VHC540 16 bit counter with latch VHC4020 VHC16244 VHCT237 "J-K Flip flop"
Contextual Info: HC Portfolio Comparison PART # VHC00 VHCT00 VHC01 VHC02 VHCT02 VHC03 VHCT03 VHC04 VHCT04 VHCU04 VHC05 VHCT05 VHC07 VHC08 VHCT08 VHC09 VHC10 VHCT10 VHC11 VHCT11 VHC14 VHCT14 VHC20 VHCT20 VHC21 VHCT21 VHC27 VHCT27 VHC30 VHCT30 VHC32 VHCT32 VHC42 VHCT42 VHC50

12123

Abstract: 74HC112 74VHC112 74VHC112M 74VHC112MTC 74VHC112N 74VHC112SJ M16A M16D MTC16
Contextual Info: VHC112 Dual J-K Flip-Flops with Preset and Clear General Description The ’VHC112 is an advanced high speed CMOS device fabricated with silicon gate CMOS technology It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation