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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ 1 DESCRIPTION SOT-223 The UTD410 can provide excellent RDS ON and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications.


    Original     		PDF UTD410 OT-223 UTD410 O-252 UTD410L-TN3-R UTD410G-TN3-R UTD410L-TN3-T UTD410G-TN3-T UTD410L-AA3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UTD410 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ 1 DESCRI PT I ON SOT-223 The UTD410 can provide excellent RDS ON and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications.


    Original     		PDF UTD410 OT-223 UTD410 O-252 UTD410L-TN3-R UTD410G-TN3-R UTD410L-TN3-T UTD410G-TN3-T UTD410L-AA3-R

    UTD410

    Abstract: UTD410-TN3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTD410 can provide excellent RDS ON and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications.


    Original     		PDF UTD410 UTD410 UTD410L UTD410-TN3-R UTD410L-TN3-R UTD410-TN3-T UTD410L-TN3-T O-252 UTD410-TN3-R