Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UN1116 Search Results

    UN1116 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN1116 Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN1116 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN1116 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    UN1116Q Panasonic TRANS GP BJT PNP 50V 0.1A 3M Original PDF
    UN1116-Q Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN1116R Panasonic TRANS GP BJT PNP 50V 0.1A 3M Original PDF
    UN1116S Panasonic TRANS GP BJT PNP 50V 0.1A 3M Original PDF

    UN1116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN1116

    Abstract: UNR1116 XP04116 XP4116
    Text: Composite Transistors XP04116 XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF XP04116 XP4116) UNR1116 UN1116) UN1116 XP04116 XP4116

    UN1116

    Abstract: UNR1116 XP01116 XP1116
    Text: Composite Transistors XP01116 XP1116 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1116(UN1116 )x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP01116 XP1116) UNR1116 UN1116 UN1116 XP01116 XP1116

    UN1116

    Abstract: XP4116
    Text: Composite Transistors XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1116 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage


    Original     		PDF XP4116 UN1116 UN1116 XP4116

    UN1116

    Abstract: XP1116
    Text: Composite Transistors XP1116 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1116 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


    Original     		PDF XP1116 UN1116 UN1116 XP1116

    UN1116

    Abstract: XN1116
    Text: Composite Transistors XN1116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1116 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1116 UN1116 UN1116 XN1116

    UN1116

    Abstract: UN1216 XP4316
    Text: Composite Transistors XP4316 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1216+UN1116 • Absolute Maximum Ratings Parameter (Ta=25˚C) Ratings Unit Collector to base voltage


    Original     		PDF XP4316 UN1216 UN1116 UN1116 XP4316

    UN1116

    Abstract: UNR1116 XP06116 XP6116
    Text: Composite Transistors XP06116 XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter


    Original     		PDF XP06116 XP6116) UNR1116 UN1116) UN1116 XP06116 XP6116

    UN1116

    Abstract: UNR1116 XN01116 XN1116
    Text: Composite Transistors XN01116 XN1116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1116(UN1116) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01116 XN1116) UNR1116 UN1116) UN1116 XN01116 XN1116

    UN1116

    Abstract: XP6116
    Text: Composite Transistors XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1116 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings


    Original     		PDF XP6116 UN1116 UN1116 XP6116

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316
    Text: Composite Transistors XP04316 XP4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) + UNR1116(UN1116) • Absolute Maximum Ratings Parameter


    Original     		PDF XP04316 XP4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XP04316 XP4316

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR111x UN111x UNR1110 UNR1111 UNR1112

    UN1116

    Abstract: UNR1116 XN06116 XN6116
    Text: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol


    Original     		PDF XN06116 XN6116) UN1116 UNR1116 XN06116 XN6116

    UN1114

    Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●


    Original     		PDF 111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118

    UN1116

    Abstract: UNR1116 XN04116 XN4116
    Text: Composite Transistors XN04116 XN4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage


    Original     		PDF XN04116 XN4116) UN1116 UNR1116 XN04116 XN4116

    UN1116

    Abstract: UNR1116 XN06116 XN6116
    Text: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor ● 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3


    Original     		PDF XN06116 XN6116) UNR1116 UN1116) UN1116 XN06116 XN6116

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
    Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316

    UN1116

    Abstract: UN1216 XN4316
    Text: Composite Transistors XN4316 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO


    Original     		PDF XN4316 UN1216 UN1116 UN1116 XN4316

    UN1116

    Abstract: XN6116
    Text: Composite Transistors XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Rating Collector to emitter voltage of element Collector current Ratings Unit VCBO –50 V –50 V –100 mA Total power dissipation


    Original     		PDF XN6116 UN1116 XN6116

    UNR1110

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ


    Original     		PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
    Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 3 0.4±0.2 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)


    Original     		PDF XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


    OCR Scan     		PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211