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    U3055A Search Results

    U3055A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    U3055A Samsung Electronics BV(dss): 60V R(ds-on): 0.15 ? I(d): 8 A advanced power MOSFET Scan PDF

    U3055A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V


    Original
    PDF SSR/U3055A

    SSR -25 DD

    Abstract: No abstract text available
    Text: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V


    Original
    PDF SSR/U3055A 32oduct SSR -25 DD

    Untitled

    Abstract: No abstract text available
    Text: SAS Serial Attached SCSI and SATA (Serial ATA) Protocol Analyzers U3051C Micro 2 port 6 Gbps SAS/SATA protocol analyzer U3052C and U3057C PRO 4 port 6 Gbps SAS/SATA protocol analyzer U3055A and U3056A PRO II 4 port 12 Gbps SAS/SATA protocol analyzer U3053C Jammer


    Original
    PDF U3051C U3052C U3057C U3055A U3056A U3053C U3055A/U3056A 5991-1494EN

    DD404

    Abstract: SSR SYMBOL
    Text: SSR/U3055A A d van ced Power MOSFET FEATURES 60 V 0.15ß Avalanche Rugged Technology • Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ V DS = 60V


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    PDF SSR/U3055A 7Tb414B DD40477 Q04047fl DD404 SSR SYMBOL

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSR/U3055A P o w e r MOSFET FEATURES BV D SS — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 8 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


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    PDF SSR/U3055A

    Untitled

    Abstract: No abstract text available
    Text: SSR/U3055A FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 60 V ^ D S o n = 0 .1 5 ft o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (M ax.) @ V DS = 60V


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    PDF SSR/U3055A

    EZ-34

    Abstract: IRFM120A U2N60
    Text: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A


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    PDF IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A EZ-34 IRFM120A U2N60

    Untitled

    Abstract: No abstract text available
    Text: SSR/Ü3055A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 6 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ Lower RDS{0N) : 0.097 £2 (Typ.)


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    PDF SSR/U3055A 300nF