TTA0002 Search Results

TTA0002 Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components TTA0002(Q) TRANS PNP 160V 18A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TTA0002(Q)	Bulk	331		1	1 $4.31 10 $2.843 100 $4.31 1000 $1.56 10000 $1.56	Buy Now
Avnet Americas	TTA0002(Q)	Tray		15 Weeks	100	1 - 10 - 100 $1.90944 1000 $1.6848 10000 $1.6848	Buy Now
Mouser Electronics	TTA0002(Q)					1 $3.93 10 $2.66 100 $1.9 1000 $1.56 10000 $1.56	Get Quote
TME	TTA0002(Q)		467		1	1 $3.17 10 $2.85 100 $2.27 1000 $2.27 10000 $2.27	Buy Now
Avnet Asia	TTA0002(Q)			24 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	TTA0002(Q)		200	21 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	TTA0002(Q)		200		1	1 - 10 - 100 $2.8 1000 $2.59 10000 $2.59	Buy Now

TTA0002 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TTA0002		Toshiba	TTA0002 - TRANSISTOR 18 A, 160 V, PNP, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-21F1A, 3 PIN, BIP General Purpose Power		Original	PDF
TTA0002(Q)		Toshiba	TTA0002 - Trans GP BJT PNP 160V 18A 3-Pin(3+Tab) TO-3PL		Original	PDF

TTA0002 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TTC0002 Abstract: TTA0002 2-21F1A Text: TTC0002 東芝トランジスタシリコンNPN三重拡散形 TTC0002 ○ 電力増幅用単位: mm • 高耐圧です。: VCEO = 160 V 最小 • TTA0002 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。	Original	PDF	TTC0002 TTA0002 2-21F1A TTC0002 TTA0002 2-21F1A
TTC0002 Abstract: TTA0002 100-W 2-21F1A Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output	Original	PDF	TTC0002 TTA0002 TTC0002 TTA0002 100-W 2-21F1A
TTA0002 Abstract: TTC0002 100-W 2-21F1A Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output	Original	PDF	TTA0002 TTC0002 TTA0002 TTC0002 100-W 2-21F1A
Untitled Abstract: No abstract text available Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output	Original	PDF	TTA0002 TTC0002
Untitled Abstract: No abstract text available Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output	Original	PDF	TTC0002 TTA0002
TTC0002 Abstract: 2-21F1A TTA0002 Text: TTA0002 東芝トランジスタシリコンPNP三重拡散形 TTA0002 ○ 電力増幅用単位: mm • 高耐圧です。: VCEO = －160 V 最小 • TTC0002 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。	Original	PDF	TTA0002 TTC0002 2-21F1A TTC0002 2-21F1A TTA0002
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	PDF	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	PDF	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
TIS84 Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763 Text: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125	Original	PDF	TIP539 O-204AA/TO-3: TIP540 TIP54 O-218 TIP544 TIS84 TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	PDF	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

SMD TRANSISTOR H2A NPN Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	PDF
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Text: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322