TP9012NND03 Search Results
TP9012NND03 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
marking J3Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 |
Original |
WBFBP-03B TP9013NND03 WBFBP-03B 500mA) TP9012NND03 150mW 500mA 500mA 30MHz marking J3 | |
2t1 transistor
Abstract: marking 2t1
|
Original |
WBFBP-03B TP9012NND03 WBFBP-03B TP9013NND03 150mW -50mA -500mA, 2t1 transistor marking 2t1 | |
|
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 |
Original |
WBFBP-03B TP9013NND03 WBFBP-03B 500mA) TP9012NND03 150mW 500mA 500mA 30MHz | |
|
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to TP9013NND03 Excellent hFE linearity |
Original |
WBFBP-03B TP9012NND03 WBFBP-03B TP9013NND03 150mW -50mA -500mA, |