N Mosfet
Abstract: transistor DK RN DIODE MOTOROLA Case 403 TMOS E-FET Q4000 transistor t 2190
Contextual Info: MOTOROLA Order this docum ent by M TP30P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP30P06V TMOS V Power Field Effect Transistor M o t o r o la P re fe rre d D e v ic e P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 30 AMPERES
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TP30P06V/D
HX34708T-0
MTP30P06V/D
N Mosfet
transistor DK RN
DIODE MOTOROLA Case 403
TMOS E-FET
Q4000
transistor t 2190
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TH 2190 Transistor
Abstract: TP30P06V SS2000 TH 2190 mosfet
Contextual Info: MOTOROLA O rder this docum ent by M TP30P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP30P06V TMOS V Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This
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TP30P06V/D
21A-06
TH 2190 Transistor
TP30P06V
SS2000
TH 2190 mosfet
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30p06v
Abstract: 30P06
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet M T P 30P 06V TM O S V P o w er Field E ffe c t T ransistor M o to ro la P re fe rre d D e v ic e P-Channel Enhancement-Mode Silicon Gate TM O S POW ER FET T M O S V is. a n e w te c h n o lo g y d e s ig n e d to a c h ie v e a n o n - r e s is ta n c e a re a p r o d u c t a b o u t o n e - h a lt th a t o f s ta n d a r d M O S F E T s . T h is
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30P06V
0E-05
0E-04
0E-03
0E-01
30p06v
30P06
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