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    TK39J60W5 Price and Stock

    Toshiba America Electronic Components TK39J60W5,S1VQ

    MOSFET N-CH 600V 38.8A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK39J60W5,S1VQ Tube 35 1
    • 1 $12
    • 10 $12
    • 100 $12
    • 1000 $6.0775
    • 10000 $6.0775
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    Mouser Electronics TK39J60W5,S1VQ 39
    • 1 $10.87
    • 10 $10.68
    • 100 $6.22
    • 1000 $6.07
    • 10000 $6.07
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    Toshiba America Electronic Components TK39J60W5S1VQ

    Trans MOSFET N 600V 38.8A 3-Pin SC-65 Bag - Rail/Tube (Alt: TK39J60W5,S1VQ)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK39J60W5S1VQ Tube 20 Weeks 25
    • 1 -
    • 10 -
    • 100 $6.90404
    • 1000 $6.5637
    • 10000 $6.5637
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    Toshiba America Electronic Components TK39J60W5,S1VQ(O

    Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-3PN
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    Verical TK39J60W5,S1VQ(O 80 5
    • 1 -
    • 10 $5.3875
    • 100 $4.95
    • 1000 $4.95
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    Chip1Stop TK39J60W5,S1VQ(O Bulk 80
    • 1 $5.16
    • 10 $4.63
    • 100 $4.25
    • 1000 $4.25
    • 10000 $4.25
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    TK39J60W5 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK39J60W5,S1VQ Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V 38.8A TO-3P(N) Original PDF

    TK39J60W5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK39J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK39J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK39J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK39J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK39J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK39J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK39J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK39J60W5

    TK39J60W5

    Abstract: DSA0076686
    Text: TK39J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK39J60W5 TK39J60W5 DSA0076686

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original
    PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120