TIES06 Search Results

Contextual Info: TIES06 Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • Spectrally Matched to Silicon Sensors . . . Peak Emission at 910 nm • Circular, Consistent-Size, Flat Emitting Areas . . . 7.5 Mils Diameter

TIES06

Contextual Info: TEXAS OPTOELECTRONICS INC IDE D I TOI OODG1DS T | Texas Optoelectronics, Inc. TIES06 Gallium Arsenide Infrared-Emitting Diodes D ESIG N ED TO EMIT W EAR-IN FRARED R A D IA N T EN E R G Y WHEN FORW ARD BIA SED • Spectrally Matched to Silicon Sensors . . Peak Emission at 910 nm

Contextual Info: TIESO6 Gallium Arsenide Infrared-Emitting Diodes Select Products Here Go The TIES06 is designed to emit near-infrared radiant energy when forward biased FEATURES ● Spectrally matched to silicon sensors . . .peak emission at 910 nm ● Circular, consistent-size, flat emitting areas . . . 7.5 Mils Diameter

Contextual Info: TIES06 Gallium Arsenide Hill • • » * Texas Optoelectronics, Inc. |n f | > a f e d - E l T I¡ I t ¡119 D jO d C S DESIGNED TO EMIT NEAR -INFR AR ED RADIANT ENERGY WHEN FORWARD BIASED • Spectrally Matched to Silicon Sensors Peak Emission at 9 1 0 nm

TIL702

Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or