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TH58NYG4S0FBAID Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.	Original	TH58NYG4S0FBAID TH58NYG4S0F 4328-byte 2014-03-12C	PDF
toshiba TH58NVG*D Contextual Info: NAND Flash Memory SLC Large Capacity Product list of NAND Flash Memory SLC Large Capacity Block Size: 256K Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number	Original	TC58NVG3S0FBAID 48-P-1220- TC58NVG3S0FTA00 TC58NVG3S0FTAI0 P-TFBGA63-1011- TC58NYG3S0FBAID TH58NVG4S0FTA20 TH58NVG4S0FTAK0 toshiba TH58NVG*D	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.

Original

TH58NYG4S0FBAID TH58NYG4S0F 4328-byte 2014-03-12C

PDF

toshiba TH58NVG*D

Contextual Info: NAND Flash Memory SLC Large Capacity Product list of NAND Flash Memory SLC Large Capacity Block Size: 256K Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number

Original

TC58NVG3S0FBAID 48-P-1220- TC58NVG3S0FTA00 TC58NVG3S0FTAI0 P-TFBGA63-1011- TC58NYG3S0FBAID TH58NVG4S0FTA20 TH58NVG4S0FTAK0 toshiba TH58NVG*D

PDF