TCH72S0 Search Results

Contextual Info: 45E D • TCH72S0 00177b? T «TOSH TOSHIBA TRANSISTOR - 2N4403 SILICON PNP EPITAXIAL TY P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : I c E V = _ 1 0 0 n A ( M a x .) ,

Contextual Info: Tì TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ¿ fa sh h i n D eT| TCH72S0 □ 99D DISCRETE/OPTO SEMICONDUCTOR TOSHIBA 16846 DT-3<?-l3 FIELD EFFECT TRANSISTOR •Y T F 5 4 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

2SA86

Abstract: QD03 2SA967 821e
Contextual Info: TOSHIBA {DISCRETE/OPT01 BT O P N P ig^ Ü ^ 'f O PNP Type Hi j?h Sp eed S w i t c h i n g A p p l i c a t i o n s DE | TCH72S0 □ Cm035t:] 1 f t = 4 GHz Typ • ( 1^ = - 1 0 inA ) M AXIM UM CH A RA CTERISTIC ^ ÿ fi • fi . n ' ^ (H « Œ i î j ^ • *< -*. ( | | £

T0T7250

Abstract: FS1N
Contextual Info: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 6.4 GHz to 7.2 GHz

7 segment display duplex led type

Abstract: IR 10e IR 10e 1c
Contextual Info: TT TOSHIBA {D IS CRETE/O PTO} 9097250 T O S H IB A D IS C R E T E /O P T O 99D D E I TOTTSSQ 0017251 ñ 17251 D T -^ -3 3 TLG2098A, TLG4093A TLG2248, TLG4243 GREEN COLOR 4 DIGITS LED DISPLAY * For Duplex drive connections and available both polarity coaoon anode or coaaon

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-15 Features • High power - p 1dB = 42.0 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications Q¡ = 25°C

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1113 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType L2-rt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

Contextual Info: TOSHIBA TLG1005, TLGD1005, TLPG1005, TLOE1005, TLYE1005, TLS1005, TLRA1005 LED Surface Mount Device Unit in mm Features • 2 mm Thrust Out Domed Lens • 3.2 L x 2.4(W) x 2.5(H) mm Size - High Efficiency SMD Lamps - Realizing over 5 times Luminous than TL*1002 Series