TC7WH04 Search Results

TC7W04

Abstract: 2601a TC7WH04FU TC7WH04FK
Contextual Info: TC7WH04FU/FK 東芝CMOSデジタル集積回路 シリコン モノリシック TC7WH04FU, TC7WH04FK TRIPLE INVERTER 特 • 長 TC7WH04FU : tpd = 3.8 ns 標準 @VCC = 5V, CL = 15pF 高速動作 • 低消費電流 : ICC = 2 A (最大) @Ta = 25°C • 高雑音余裕度

TC7WH04FC

Contextual Info: TC7WH04FC 東芝CMOSデジタル集積回路 シリコン モノリシック TC7WH04FC Triple Inverter 特 • 長 : tpd = 3.8ns 標準 @VCC = 5V, CL = 15pF 高速動作 • 低消費電流 : ICC = 2 A (最大) @ Ta = 25℃ • 高雑音余裕度 : VNIH = VNIL = 28% VCC (最小)

TC7WH04FC

Contextual Info: TC7WH04FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH04FC Triple Inverter Features • High-speed : tpd = 3.8ns typ. at VCC = 5V, CL = 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min)

Contextual Info: TC7WH04FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH04FC Triple Inverter Features • High-speed :tpd=3.8ns Typ. at VCC=5 V, CL=15pF • Low power dissipation :ICC=2 A(Max.) at Ta=25°C • High noise immunity :VNIH=VNIL=28%VCC(Min.)

Contextual Info: Reliability Tests Report Product Name: TC7WH04FK Package Name: US8 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

Contextual Info: TOSHIBA TC7WH04FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH04FU, TC7WH04FK TRIPLE INVERTER The TC7WH04 is an advanced high speed CMOS INVERTER fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: TC7WH04FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH04FC Triple Inverter Features • TC7WH04FC High-speed :tpd = 3.8ns Typ. at VCC = 5 V • Low power dissipation :ICC=2µA(Max.) at Ta=25°C • High noise immunity :VNIH=VNIL=28%VCC(Min.)

TC7WH04FC

Contextual Info: TC7WH04FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH04FC Triple Inverter Features • High-speed :tpd = 3.8ns Typ. at VCC = 5 V • Low power dissipation :ICC=2 A(Max.) at Ta=25°C • High noise immunity :VNIH=VNIL=28%VCC(Min.) •

TC7WH04

Abstract: TC7WH04FK TC7WH04FU
Contextual Info: TOSHIBA TC7WH04FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH04FU, TC7WH04FK TRIPLE INVERTER The TC7WH04 is an advanced high speed CMOS INVERTER fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

TC7WH04FU

Contextual Info: TOSHIBA TENTATIVE TC7WH04FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT UNDER DEVELOPMENT SILICON MONOLITHIC TC7WH04FU TRIPLE INVERTER The TC7WH04FU is an advanced high speed CMOS INVERTER fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: T O SH IB A TC7WH04FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH04FU TRIPLE INVERTER The TC7WH04FU is an advanced high speed CMOS INVERTER fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: T O SH IB A TC7WH04FU/FK TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC7WH04FU, TC7WH04FK TRIPLE INVERTER The TC7W H04 is an advanced high speed CMOS INVERTER fabricated w ith silicon gate CM OS technology. It achieves the high speed operation sim ilar to equivalent

Contextual Info: Reliability Tests Report Product Name: TC7WH04FC Package Name: CST8 1. Thermal tests Test Item Heat resistance Reflow Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

Contextual Info: TC7WH04FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH04FU, TC7WH04FK Triple Inverter Features TC7WH04FU • High speed: tpd = 3.8ns typ. at VCC = 5V, CL = 15pF • Low power dissipation: ICC = 2 A (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min)

SSOP8 Package

Abstract: TC7WH04 TC7WH04FK TC7WH04FU
Contextual Info: TC7WH04FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH04FU,TC7WH04FK Triple Inverter The TC7WH04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: Reliability Tests Report Product Name: TC7WH04FU Package Name: SM8 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

Contextual Info: TOSHIBA TENTATIVE TC7WH04FU TASI NBA fi I¥1fr S EllíjlTAE INTEriflATEO fiinfjl.HT flElfjffiN n^fiìMiSìblTI llíj UNDER DEVELOPMENT TRIPLE INVERTER TllU TC7W I104PU l!> CMOS- INVERTER fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: TC7WH04FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH04FC Triple Inverter Features • High-speed : tpd = 3.8 ns typ. at VCC=5 V, CL=15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min)

TC7WH04FU

Abstract: TC7WH04 TC7WH04FK
Contextual Info: TO SH IBA TC7WH04FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH04FU, TC7WH04FK TRIPLE INVERTER The TC7WH04 is an advanced high speed CMOS INVERTER fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

TC7W04

Abstract: TC7WH04FK TC7WH04FU tc7w04 rohs
Contextual Info: TC7WH04FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH04FU,TC7WH04FK Triple Inverter Features TC7WH04FU • High speed: tpd = 3.8ns typ. at VCC = 5V, CL = 15pF • Low power dissipation: ICC = 2 A (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min)

Contextual Info: TOSHIBA TC7WH04FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf7W H n JFII TRIPLE INVERTER The TC7WH04FU is an advanced high speed CMOS INVERTER fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

specifications of transistor AC126

Abstract: hc132a hc138a specifications of AC126 HC74A TC7PGU04FU transistor AC126 hc273a -toshiba toshiba vhc32 TC4W53FU
Contextual Info: SEMICONDUCTOR GENERAL CATALOG General-Purpose Logic ICs CMOS Logic ICs Low-Voltage CMOS Logic ICs CMOS Logic ICs in Ultra-Small US Packages Dual-Supply Level Shifters CMOS Bus Switch ICs Application-Specific Logic One-Gate CMOS L-MOS 1 2009-8 SCE0004I CMOS Logic ICs (74AC, 74VHC, 74HC and Standard Series) Quick Reference

TLP3616

Abstract: VT6212 TX4939 TX4939XBG RBTX4939 12ARMS tlp3506 TLP3507
Contextual Info: 東芝半導体情報誌アイ 2005年8月号 VOLUME 157 CONTENTS 新製品情報 TX4939XBG-400リファレンスボード .2

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.