TC7SH00 Search Results

7W14F

Abstract: 7W14 7w04f 7W00F 4w53f 7wu04 7w74f 7w08f 4W53 7w125
Contextual Info: il] Product, Function and Identify mark Table MODEL TC4S01F TC4S11F TC4SU11F TC4S30F TC4S66F TC4S69F TC4SU69F TC4S71F TC4S81F TC4S584F TC7S00F/FU TC7S02F/FU TC7S04F/FU TC7SU04F/FU TC7S08F/FU TC7S14F/FU TC7S32F/FU TC7S66F/FU TC7S86F/FU TC7SH00F/FU TC7SH02F/FU

Contextual Info: TC7SH00FJC7SH00FU 2-INPUT NAND GATE T he TC7SH00 is an a d va n ce d h ig h speed CMOS 2-INPUT N A N D GATE fa b ric a te d w ith silico n g a te C2MOS te c h n o lo g y . It achieves th e h ig h speed o p e ra tio n s im ila r to e q u iv a le n t B ip o la r S c h o ttky TTL w h ile m a in ta in in g th e

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7SH00F/FU D-Type Flip Flop with Preset and Clear T he T C 7S H 00 is an a d v a n c e d high sp e e d C M O S 2 -In p u t N AN D G ate fa b rica te d with silicon g a te C M O S technology. It a ch ie ve s the high sp e e d o p e ra tio n sim ilar to e q u iva le n t B ip o la r

Contextual Info: T O SH IB A TC7SH00F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7SH00F, TC7SH00FU 2-INPUT NAND GATE The TC7SH00 is an advanced high speed CM OS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar

TC7SH00

Abstract: TC7SH00F TC7SH00FU
Contextual Info: TOSHIBA TC7SH00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH00F, TC7SH00FU 2-INPUT NAND GATE The TC7SH00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar

TC7SH00FS

Contextual Info: TC7SH00FS 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH00FS 2-Input NAND Gate 特 • 長 : tpd = 3.7ns 標準 @ VCC = 5V, 15pF 高速動作 • 低消費電流 : ICC = 2 A (最大) @ Ta = 25℃ • 広い動作電圧範囲 : VCC = 2 ~ 5.5V

TC7SH00FS

Contextual Info: TC7SH00FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FS 2-Input NAND Gate Features • High speed operation : tpd = 3.7ns typ. at VCC = 5V, 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • Wide operating voltage range: VCC = 2 to 5.5 V

TC7SH00FE

Contextual Info: TC7SH00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FE 2-Input NAND Gate Features • High speed operation : tpd = 3.7ns typ. at VCC = 5V, 15pF : ICC = 2 A (max) at Ta = 25°C • Low power dissipation • Wide operating voltage range : VCC = 2 to 5.5V

TC7SH00F

Abstract: TC7SH00FU
Contextual Info: TC7SH00F/FU 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH00F, TC7SH00FU 2-Input NAND Gate 特 TC7SH00F 長 • 高速動作 : tpd = 3.7 ns 標準 @ VCC = 5 V, 15 pF • 低消費電流 : ICC = 2 A (最大) @ Ta = 25°C • 入力端子に､ 5.5 V トレラント機能あり

TC7SH00F

Abstract: TC7SH00 TC7SH00FU
Contextual Info: TOSHIBA TC7SH00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH00F, TC7SH00FU 2-INPUT NAND GATE The TC7SH00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar

Contextual Info: Reliability Tests Report Product Name: TC7SH00FE Package Name: ESV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

Contextual Info: TC7SH00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FE 2-Input NAND Gate Features • High speed operation : tpd = 3.7ns typ. at VCC = 5V, 15pF : ICC = 2 A (max) at Ta = 25°C • Low power dissipation • Wide operating voltage range : VCC = 2 to 5.5V

Contextual Info: TC7SH00FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FS 2-Input NAND Gate Features • High speed operation : tpd = 3.7ns typ. at VCC = 5V, 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • Wide operating voltage range: VCC = 2 to 5.5 V

Contextual Info: TC7SH00FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FS 2 Input NAND Gate Features • High speed: tpd = 3.7 ns typ. at VCC = 5 V, 15 pF • Low power dissipation: ICC = 2 A (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min)

TC7WOOFU

Abstract: TC7WU04FU TC4W66FU TC7WU04F tc7sh04fu
Contextual Info: L-MOS M - 3 Gate C-MOS Series F6 Package SMV Appearance Function ht1!r _L^ ¡111 i 7 iC i mm) FM8 2. I T High-Speed Series VHS Series 1V Operate High-Speed Series Series TC7S00F TC7SH00FA TC7SL00F Tr I v A— yLnr 4 .5 / U r Standard Series SM8 If lJt.9

Contextual Info: Reliability Tests Report Product Name: TC7SH00F Package Name: SMV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

Contextual Info: TC7SH00FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FS 2 Input NAND Gate Features • High speed: tpd = 3.7 ns typ. at VCC = 5 V, 15 pF • Low power dissipation: ICC = 2 µA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min)

Contextual Info: TOSHIBA TC7SH00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT T r7 < ;n n n F • m wèêf ■ ■ir SILICON MONOLITHIC T r 7 < ;n n n F ii m g m m v ■ ■ ^ht ■ 2-INPUT NAND GATE The TC7SH00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS

Contextual Info: Reliability Tests Report Product Name: TC7SH00FS Package Name: fSV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

Contextual Info: TOSHIBA TC7SH00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH00F, TC7SH00FU 2-INPUT NAND GATE The TC7SH00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar

TC7SH00FE

Contextual Info: TC7SH00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FE 2 Input NAND Gate Features • Super high speed operation : tPD = 3.7 ns typ. @VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C • High noise immunity : VNIH = VNIH

toshiba logic

Abstract: TC7SH00FE
Contextual Info: TC7SH00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FE 2 Input NAND Gate Features • Super high speed operation : tPD = 3.7 ns typ. @VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C • High noise immunity : VNIH = VNIH

TC7SH00FS

Contextual Info: TC7SH00FS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Preliminary TC7SH00FS 2-INPUT NAND GATE The TC7SH00FS is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation while maintaining the CMOS

TC7SH00FE

Contextual Info: TC7SH00FE 東芝CMOSデジタル集積回路 シリコン モノリシック TC7SH00FE 2-Input NAND Gate 特 • 長 :tpd = 3.7 ns 標準 @ VCC = 5V, 15pF 高速動作 • 低消費電流 : VCC = 2 A (最大) @ Ta = 25℃ • 広い動作電圧範囲 : VCC = 2 ~ 5.5V