TC532000AP Search Results

TCS3200

Abstract: TC532000
Contextual Info: 2 M B IT 2 5 6 K W O R D X 8 B IT C M O S M A S K R O M D E S C R IP T IO N The TC 532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The TC532000AP / A F is fabricated using Toshiba’s advanced CMOS technology which provides the

TCS3200

Abstract: 256KW
Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC532000AP/AF 2M BIT 256K W O R D x 8 B IT C M O S M A S K RO M D ESCRIPTIO N T h e T C 5 3 2 0 0 0 A P / A F is a 2 ,0 9 7 ,1 5 2 b its re a d on ly m em ory o rgan ized a s 262 ,1 4 4 w ords b y 8 b its.

Contextual Info: TOSHIBA TC532000AP/AF SILICON STACKED GATE CMOS 262,144 WORD x 8 BIT CMOS MASK ROM D e scriptio n The TC532000AP/AF is a 2,097,152 bit read only memory organized as 262,144 words by 8 bits. The TC532000AP/AF is fabricated using Toshiba’s advanced CMOS technology which results in high speed and low power

SOP32 525mil

Abstract: DIP32 AF-15
Contextual Info: m ÈÊÈÊm 2M BIT 2 5 6 K W O R D X 8 B IT CM O S M A S K ROM DESCRIPTION The TC532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The T C 532000A P/A F is fabricated using Toshiba’s advanced CMOS technology which provides the