TC51WKM616AXGN Search Results
TC51WKM616AXGN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| TC51WKM616AXGN75 |
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4,194,304-Word BY 16-BIT CMOS PSEUDO STATIC RAM | Original |
TC51WKM616AXGN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TC51WKM616AXGN75Contextual Info: TC51WKM616AXGN75 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WKM616AXGN is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high |
Original |
TC51WKM616AXGN75 304-WORD 16-BIT TC51WKM616AXGN 864-bit TC51WKM616AXGN75 | |
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Contextual Info: TC51WKM616AXGN65,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WKM616AXGN is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high |
Original |
TC51WKM616AXGN65 304-WORD 16-BIT TC51WKM616AXGN 864-bit |