TC518129
Abstract: de interlace
Text: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes
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TC518129AP/ASP/AF/AFW-80/10/12
TC518129APL/ASPL/AFL/AFWL30/10/12
TC518129AFTLS0/10/12
TC518129APL/ASPL/AFL/AFWL/AFTL-80/10/12
AO-A16
TC518129
de interlace
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TC518129AFwl
Abstract: No abstract text available
Text: TOSHIBA TC518129APL/AFL/AFWL-80LV/lOLV/12LV TC518129AFTL80LV/lOLV/12LV SILICON GATE CM O S 131,072 W ORD x 8 BIT C M O S PSEUDO STATIC RAM D escription The TC5181 29A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV
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TC518129APL/AFL/AFWL-80LV/lOLV/12LV
TC518129AFTL80LV/lOLV/12LV
TC5181
TC518129A-LV
D-112
TC518129APL/AFL/AFWL/AFTL-80LV/1OLV/12LV
D-113
TC518129APL/AFL/AFWL/AFTL-80LV/1
TC518129AFwl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC518129A P/A SP/A F/A FW W 10/12 TC518129APL/ASPL/AFL/AFW L50/10/12 TC518129AFTL80/10/12 SILICON GATE CM OS 131,072 WORD x 8 BIT CM OS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 9 A is a 1M bit high sp e e d C M O S p s e u d o sta tic R A M organized a s 1 3 1,072 w o rd s by 8 bits. The T C 5 1 8 1 2 9 A utilizes
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TC518129A
TC518129APL/ASPL/AFL/AFW
L50/10/12
TC518129AFTL80/10/12
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC518129APL/AFL/AFWLr80LV/10LV/12LV TC518129AFTLÍ0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV
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TC518129APL/AFL/AFWLr80LV/10LV/12LV
TC518129AFTLÃ
0LV/10LV/12LV
TC518129A-LV
TC518129A-LV
TC518129APL/AFL/AFWL/AFTL-80LV/1OLV/12LV
D-113
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS
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7C518129A-LV
TC518129A-LV
-12LV
TC518129AFWL-80LV
TC518129AFWL-10LV
TC518129AFWL-12LV
TC518129APL/AFL/AFWLâ
-10LV,
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Untitled
Abstract: No abstract text available
Text: 131,072 W O R D S X 8 BIT C M O S P SEU D O STATIC R A M DESCRIPTIO N The TC518129A Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A Family utilizing one transistor dynamic memory cell with CMOS peripheral circuit provides large capacity , high speed and low power features. The feature includes
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TC518129A
18129AFW-12,
TC518129AFWL-12
TC518129AP/ASP/AF/AFWâ
TC518129APL/ASPL/AFL/AFWLâ
TC518129AFTL/ATRLâ
TSOP32
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS
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L06IC/NEH0RY
TC518129A-LV
TC518129APL/AFL/AFWLâ
-10LV,
-12LV
TC518129AFTL/ATRLâ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MÖE L O G I C / M E N O R Y TD'iTSMÖ D DDSSÜST iÑ M tm m m p s /m á P W M F m F W /- ^ i m l E S i l @1! » y s i i F i i Ä b «TOSS , ' =11% “ •II t t ,; , 'PId )ÍÍ - T ^ i r Z V f 1* 1 3 1 ,0 7 2 W O R D S X 8 BIT C M O S PSEUDO
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TC518129A
TC518129APL/ASPL/AFL/AFWLâ
TC518129AFTL/ATRLâ
TC518129AFTL-80
TC518129AFTL-10
TC518129AFTL-12
TC518129AP/ASP/AF/AFWâ
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