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TC3141 Abstract: GRM39C0G102J50V GRM39Y5V104Z25V Text: TC3141 REV3_20040412 2.4 GHz 2W MMIC FEATURES PHOTO ENLARGEMENT • P-1 dB: 33 dBm Vg GND RF OUT • Small Signal Gain: 29 dB RF IN • Power Added Efficiency: 31 % RF IN RF OUT • IP3: 42 dBm GND Vd • DC Bias: 800 mA @ 7 V DESCRIPTION The TC3141 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume	Original	PDF	TC3141 TC3141 GRM39C0G3R3C50V GRM39C0G2R5C50V GRM39C0G010C50V GRM39C0GR75C50V GRM39C0G1R5C50V GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G102J50V GRM39Y5V104Z25V
TC3141 Abstract: GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G010C50 GRM39C0G1R5C Text: TC3143 REV0_20040402 2.1 - 2.2 GHz 2W MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 29 dB ! Power Added Efficiency: 31 % ! IP3: 42 dBm ! DC Bias: 800 mA @ 7 V DESCRIPTION The TC3143 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume	Original	PDF	TC3143 TC3143 TC3141 GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G010C50 GRM39C0G1R5C
TC1076 Abstract: TC3532 TC1950 tc3141 TC1900 TC3331 tc1953a TC4522 TC4531 TC1037 Text: 6/26/2008 MMICs Product Selection Guide Product No. Freq. GHz G.O.F. (+/-dB) Gain (dB) Pout (dBm) 41.5 0.5 0.6 22 19 16 8.5 11.5 P-1dB (dBm) P-2dB (dBm) P-3dB (dBm) TC1037 TC1073 TC1076 TC1900 TC1901 3.1~3.5 9.2~10.2 9.2~10.2 0.00003~12 2~20 TC1902 6~18	Original	PDF	TC1037 TC1073 TC1076 TC1900 TC1901 TC1902 TC1954 TC1956 TC1985 TC4820 TC1076 TC3532 TC1950 tc3141 TC1900 TC3331 tc1953a TC4522 TC4531 TC1037
TDA 7240 equivalent Abstract: TDA 7240 pin diagram Text: ^^PÌ\|^^§ÌPS!H1Ì!\|Ì\|PIPS§I§\|ÌSÌS TOSHIBA % L O G I C / M E M O R Y ^7240 0Q2QÔÛ4 S * T 0 S 2 8 4,194,304 WORD x 1 BIT fiYNAMIC RAM * This is advanced information and specifications are subject to change without notice. 7 " ^ ¿ - “2 3 - / S ’"	OCR Scan	PDF	TC514100J/Z TC514100J/Z-80 TC5141OOJ/Zâ T-46-23-15 TDA 7240 equivalent TDA 7240 pin diagram
AZL-70 Abstract: TC514100APL TC514100 tc3141 Text: 4,194,304 WORD x 1 BIT DYNAMIC RAM PRELIMINARY D E S C R IP T IO N T he TC514100APL/AJL/ASJL/AZL is th e new generation dynam ic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon g ate process technology as	OCR Scan	PDF	TC514100APL/AJL/ASJL/AZL 300/350mil) TC514100APL/AJL/ASJL/AZL. a512K TC5141 L/AZL-70, AZL-70 TC514100APL TC514100 tc3141
Untitled Abstract: No abstract text available Text: 4,1 94 ,3 0 4 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as	OCR Scan	PDF	TC514100APL/AJL/ASJL/AZL 300/350mil) TC514I00APL/AJL/ASJL/AZL. a512K TC5141 TC514100 TC5141OOAPL/AJ L/AZL-10