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    TC2996D

    Abstract: GaAs FET chip GRM39Y5V104Z25V
    Text: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %


    Original     		PDF TC2996D TC2996D GRM39COG0R7C50V GRM39COG1R5C50V 1000PF GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) GRM39COG2R5C50V GaAs FET chip GRM39Y5V104Z25V

    TC299

    Abstract: GHz Power FET TC3938 GHZ micro-X ceramic Package GHZ micro-X Package 35 micro-X ceramic Package FET Transistor Guide micro-x TC3953 TC3879
    Text: 20080520 Hybr i d I Cs P r oduc t S e l e c ti on G ui de Hybrid ICs Product No. ³ TC2996A TC2996B TC2996D TC2997A TC2997B TC2997C TC2997D TC2997G TC3989³ TC3989A³ Freq. GHz ³ P-1 dB (dBm)³ Gain (dB)³ IP3 (dBm)³ PAE (%)³ 1.6 1.9 2.45 1.6 1.9 2.1 2.45


    Original     		PDF TC2996A TC2996B TC2996D TC2997A TC2997B TC2997C TC2997D TC2997G TC3989³ TC3989A³ TC299 GHz Power FET TC3938 GHZ micro-X ceramic Package GHZ micro-X Package 35 micro-X ceramic Package FET Transistor Guide micro-x TC3953 TC3879