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Untitled Abstract: No abstract text available Text: T8914VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA T8914VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
21633 d Abstract: T8914VA FVOV6870 MIL-HDBK-263 Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA 2002/95/EC 2002/96/EC T8914VA 18-Jul-08 21633 d FVOV6870 MIL-HDBK-263
Untitled Abstract: No abstract text available Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA 2002/95/EC 2002/96/EC T8914VA 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA 2002/95/EC 2002/96/EC T8914VA 11-Mar-11
Untitled Abstract: No abstract text available Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA 2002/95/EC 2002/96/EC T8914VA 18-Jul-08
Untitled Abstract: No abstract text available Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA 2002/95/EC 2002/96/EC T8914VA 18-Jul-08
Untitled Abstract: No abstract text available Text: T8914VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA T8914VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: T8914VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA 2002/95/EC 2002/96/EC T8914VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: T8914VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 885 nm	Original	PDF	T8914VA T8914VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare	Original	PDF	VMN-SG2200-1502