T0T72SD Search Results

A53 OPTO

Abstract: 2SD877 AC74
Contextual Info: tôshïbT'oiIcréT 9097250 ë Tôptqï TOSHIBA "5t DE Jj T0T72SD OOQVa dT d | ‘ S6C 07 83 9 CD I S C R E T E / O P T O Ü -fLjy-Ö J SIL IC O N NPN T R IP L E D IF F U SE D TYPE INDUSTRIAL APPLICATIONS U n it in mm HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING-APPLICATIONS.

MG15C4HM1

Abstract: 2sk57 78MG Dc172SD 2sk toshiba 394 opto 2SK578 .Dt3
Contextual Info: TOSHIBA ~TÜ OISCRETE/OPTOJ DE I T0T72SD □01fc,3fl2 1 f~r_ 9 0 D 1 63Ö2 9097250 TOSHIBA D ÏSCRETE/OPTO ^siubt SEMICONDUCTOR 2SK 5 7 8 D T- 3^-/3 ~7~' 3 M G 1 5 C 4 H M 1 TECHNICAL D A ÎA ‘ 7 (150V/15A) EQUIVALEN CIRCUIT OUT LINE CO f-. in u; CM Weight : 9.75g

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ^□^7250 0017^7^ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - fl • TOSM - YTFP251 MOSI) INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. l&SMAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

A1203

Abstract: JS8851-AS MW1011
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs Chip Form Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1 OB Features • High power - P ^ b = 40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1cjB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications CE = 25° C

Contextual Info: TLP733,734 GaAs IRED a PHOTO-TRANSISTOR TLP733 OFFICE M ACHINE. HOUSEHOLD USE EQUIPM ENT. SOLID STATE R ELA Y. SWITCHING POW ER SUPPLY. The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz

mg50g2

Abstract: 16441 MG50G2CH1 lt 7550
Contextual Info: •Ì0 DE TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO ¿/oáhiha SEMICONDUCTOR 90D 0Dlt,4Ml a I 16441 D TOSHIBA GTR MODULE MG50G2CH1 TECHNICAL DATA SILICON N-CHANNEL MOS+NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.

Contextual Info: - :- TCD5301BD GENERAL TCD5301BD is an interline CCD area image sensor developed for a NTSC system Color television camera. This device has signal pixels of 682 horizontal x 492 (vertical), and its im age size agrees with 1 / 2 inch type

TCD5241BD

Abstract: TCD5251 TCD5241B
Contextual Info: TCD6219AF SUB-CARRIER PULSE GENERATING EXTERNAL SYNCHRONIZATION 1C The C M O S LSI of TC6219AF w as developed to generate sub-carrier pulse for color CCDs, TCD5241BD and TCD5251BD. The TC6219AF can be combined with TC6220AF or TC6133AF and a vertical clock driver to constitute the

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs Chip Form Features • High power - P-idB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

2SC1199

Contextual Info: TOSHIBA {DISCRETE/OPTO* 9097250 St, T O SH IB A DE p TDTVSSD 0DD7MM4 2 | CDI S C R E T E / O PT O 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. gfe. 39MAX • HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS.