T0T7250 Search Results

Contextual Info: TT TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO T0T7250 0017173 3 |~~ 99D 17173 DT-4l-Ä| TLR262 GaP RED LIGHT EMISSION FEATURES: . All Plastic Mold Type : Colorless ’ Clear Lens . Wide Radiation Pattern-Suitable For Backlighting Half Angle=±45 deg. (Typ.) (limits for 50% of Iv )

T0T7250

Abstract: FS1N
Contextual Info: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables

T0T7250

Abstract: hoya Filter ND 0.3
Contextual Info: TCD5311BD GENERAL TCD5311BD is an interline CCD area image sensor developed for a PAL/SECAM system Color television camera. This device has signal pixels of 681 horizontal x 582 (vertical), and its image size agrees with 1/2 inch type optical system. This device offers high sensitivity and high resolution,

Contextual Info: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz

TLP533

Contextual Info: TLP531,532 GaAs IRED S PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

Contextual Info: TIM1414-10L FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN IM 3 = - 4 5 dB c at Po = 29.0 dBm , G1dB = 5.0 d B at 14.0 GHz to 14.5 GHz S ingle Carrier Level ■ ■ BROAD BAND INTERNALLY MATCHED HIGH POWER ■ HERMETICALLY SEALED PACKAGE P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET J S 8 8 5 6 -A S Power GaAs FETs Chip Form Features • High power - P 1dB = 3 3 .5 dBm at f = 14.5 G H z • High gain - G idB = 6 .5 dB at f = 14.5 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

2SC2105

Abstract: 5mmX15mm 10ID
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O SH IB A Tb D E J TOTVSSO 0D07Mfth 7 <D I S C R E T E / O P T O > SIL IC O N NPN E P IT A X IA L P L A N A R TYPE Unit in nan UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=6W Min. (f=470MHz, VCc=12.6V, Pi=lW)

Contextual Info: TOSHIBA LED Lamp TLRE157P InGaAlP Red Light Emission Panel Circuit Indicator 5 mm Diameter T1 -3/4 • InGaAlP Red LED • All Plastic Mold Type • Colorless Clear Lens • Low Drive Current, High Intensity Red Light Emission - Recommended Forward Current: (t= 1 —20 mA (DC)

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2149 Unit in mm Silicon N Channel MOSType c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-DC Converter and Motor Drive Applications. • • • • I5.9MAX. '•'3.210.2 w Low Drain-Source ON Resistance: (äs(ON)= 0-6i2 OVp.)

MG15G4GL1

Abstract: toshiba mg15g4gl1 MG15G6EL1 MG15 npn DARLINGTON 15A 248A1 mg15g4
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "TD <DISCRETE/OPTO> V ' r - ‘2 > 3 - ‘3 £ ' 90D 16203 TOSHIBA GTR MODULE SEMICONDUCTOR ¿Tasiiiht DÊjH T O T T E S D O O l b H D E 3 J - MG15G4GL1 MG15G6EL1 TECHNICAL DATA SILIC O N NPN T R IP L E DIFFUSED TYPE