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    T0254 Search Results

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    T0254 Price and Stock

    SunFounder ST0254

    SW-420 SENSOR MODULE
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    DigiKey ST0254 Bag 94 1
    • 1 $14.87
    • 10 $14.87
    • 100 $9.3059
    • 1000 $7.4875
    • 10000 $7.4875
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    Samtec Inc FFMD-10-T-02.54-01-N

    .050 CABLE PLUG
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    DigiKey FFMD-10-T-02.54-01-N Bulk 6 1
    • 1 $11.76
    • 10 $9.581
    • 100 $7.8114
    • 1000 $7
    • 10000 $7
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    Avnet Americas FFMD-10-T-02.54-01-N Bulk 1
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    Mouser Electronics FFMD-10-T-02.54-01-N
    • 1 $10.27
    • 10 $9.3
    • 100 $7.27
    • 1000 $5.59
    • 10000 $5.59
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    Master Electronics FFMD-10-T-02.54-01-N
    • 1 -
    • 10 $11.93
    • 100 $7.9
    • 1000 $6.2
    • 10000 $6.2
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    Sager FFMD-10-T-02.54-01-N 1
    • 1 $10.27
    • 10 $9.3
    • 100 $7.27
    • 1000 $6.6
    • 10000 $6.6
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    DFRobot FIT0254

    PEEK INSULATOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FIT0254 Bulk 1
    • 1 $14.5
    • 10 $14.5
    • 100 $14.5
    • 1000 $14.5
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    Vishay Sfernice RCMT0254001BES03

    SFERNICE FIXED RESISTORS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RCMT0254001BES03 Bag 10
    • 1 -
    • 10 $95.101
    • 100 $95.101
    • 1000 $95.101
    • 10000 $95.101
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    Vishay Sfernice RCMT0254900BES03

    SFERNICE FIXED RESISTORS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RCMT0254900BES03 Bag 10
    • 1 -
    • 10 $73.71
    • 100 $73.71
    • 1000 $73.71
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    T0254 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sublvds to lvds

    Abstract: sub-lvds sublvds TX B0177 link budget calculation 3 POSITION TOGGLE SWITCH 6 pin s0224 sublvds SLLS836 SN65LVDS305
    Text: SN65LVDS310 www.ti.com SLLS836 – MAY 2007 PROGRAMMABLE 27-BIT SERIAL-TO-PARALLEL RECEIVER FEATURES • • • • • • • • • • • Serial Interface Technology Compatible With FlatLink 3G Transmitters E.g., SN65LVDS305 or SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB


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    PDF SN65LVDS310 SLLS836 27-BIT SN65LVDS305 SN65LVDS307) 24-Bit 405-Mbps sublvds to lvds sub-lvds sublvds TX B0177 link budget calculation 3 POSITION TOGGLE SWITCH 6 pin s0224 sublvds SLLS836

    T0-254AA

    Abstract: No abstract text available
    Text: Case Outline and Dimensions - T0-254AA Standard & Low Ohmic 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665]


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    PDF T0-254AA 5M-1994. O-254AA. T0-254AA

    Untitled

    Abstract: No abstract text available
    Text: SN65LVDS308 www.ti.com SLLS835 – MAY 2007 PROGRAMMABLE 27-BIT PARALLEL-TO-SERIAL RECEIVER FEATURES • • • • • • • • • • • FlatLink 3G Serial Interface Technology Compatible With FlatLink 3G Transmitters Such as SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB


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    PDF SN65LVDS308 SLLS835 27-BIT SN65LVDS307 24-Bit 810-Mbps

    Untitled

    Abstract: No abstract text available
    Text: SN65LVDS310 www.ti.com SLLS836 – MAY 2007 PROGRAMMABLE 27-BIT SERIAL-TO-PARALLEL RECEIVER FEATURES • • • • • • • • • • • Serial Interface Technology Compatible With FlatLink 3G Transmitters E.g., SN65LVDS305 or SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB


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    PDF SN65LVDS310 SLLS836 27-BIT SN65LVDS305 SN65LVDS307) 24-Bit 405-Mbps

    sublvds TX

    Abstract: SN65LVDS307 SN65LVDS308 sublvds
    Text: SN65LVDS308 www.ti.com SLLS835 – MAY 2007 PROGRAMMABLE 27-BIT PARALLEL-TO-SERIAL RECEIVER FEATURES • • • • • • • • • • • FlatLink 3G Serial Interface Technology Compatible With FlatLink 3G Transmitters Such as SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB


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    PDF SN65LVDS308 SLLS835 27-BIT SN65LVDS307 24-Bit 810-Mbps sublvds TX SN65LVDS307 SN65LVDS308 sublvds

    IRHM9250

    Abstract: IRHM93250 JANSF2N7423 JANSR2N7423
    Text: PD - 91299C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9250 100K Rads (Si) IRHM93250 300K Rads (Si) RDS(on) I D


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    PDF 91299C T0-254AA) IRHM9250 JANSR2N7423 MIL-PRF-19500/662 IRHM93250 JANSF2N7423 O-254AA. IRHM9250 IRHM93250 JANSF2N7423 JANSR2N7423

    Untitled

    Abstract: No abstract text available
    Text: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)


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    PDF 90713E IRHM7230 T0-254AA) IRHM3230 IRHM4230 IRHM8230 1000K O-254AA IRHM57163SED

    Untitled

    Abstract: No abstract text available
    Text: PD-91299E IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)


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    PDF PD-91299E IRHM9250 JANSR2N7423 MIL-PRF-19500/662 T0-254AA) IRHM93250 JANSF2N7423 reduces54AA.

    T0254AA

    Abstract: No abstract text available
    Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low


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    PDF T0254AA SM2F151* SM2F351* SM2F251* SM2F451* T0254AA T0258AA FT0258AA HDS100

    AGE Module

    Abstract: No abstract text available
    Text: MilitaryAerospace Division Military-Aerospace Division PowerM OS IV herm etic M O SFET s BVdss V R d s(O N ) lD(C on t) (/> ) PD (W ) ^is^(pF) Q g(nC ) P ack age Flat pack (FN) T02S8 (HN ) T0254 (CN) Pow er m od ules for high rei applications Sem elab’s 4th Generation M O SFE T s, bipolar


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    PDF T02S8 T0254 T0257 AGE Module

    T0247

    Abstract: sml1001rAN SML1001RBN
    Text: SEMELAB pie SELECTOR GUIDE VDSS RD SS on ID Pd T03 T0247 T0258 T03G100 T0247 T0247 T0258 D3PAK SOT227 MPack F-Pack T03 T0247 T0254 T03 T0220SM T0247 T0254 I T254 T0257(l) T03 T0247 T0254 T0257 T0220 T03 T0247 T0254 (I) T0254 T0257 T0257(l) T0220 SOT227 T0264


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    PDF SML1001R3AN SML1001R3BN SML1001R3HN SML1001RAN SML1001RBN SML1001RBVR SML1001RHN SML1001RSVR SML10025JVR SML10025MVR T0247

    6849a

    Abstract: SC 200 T 2n7227
    Text: T emic S e m i c o n d u c t o r s T0254 T0257 N-Channel Devices Military Faftk ‘ Î fi ? ''* r ' \.Vt' f i l V(BRiDSS<V) Hermetic Packages and Industry-Standard Military MOSFETs IRFML50 2N7075 2N7085 | 2N7085 | 2N7224 a IR FM I50 2N7081 2N7081 [RFM250


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    PDF T0254 T0257 IRFML50 2N7085 2N7081 RFM250 IRFM250 2N7086 RFM350 RFM450 6849a SC 200 T 2n7227

    APT801R2DN

    Abstract: APT5085DN
    Text: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN


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    PDF APT1001RCN APT1001R2CN APT9090CN APT901RCN APT8075CN APT8090CN APT6035CN APT6040CN APT5530CN APT5532CN APT801R2DN APT5085DN

    Untitled

    Abstract: No abstract text available
    Text: International I@ R Rectifier Provisional Data Sheet No. PD-9.1223B REPETITIVE AVALANCHE AND dv/dt RATED IRHM7450SE HEXFET TRAN SISTO R N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D Product Summary 500 Volt, 0.51», (SEE) RAD HARD HEXFET


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    PDF 1223B IRHM7450SE 46SS452 DD25457

    Untitled

    Abstract: No abstract text available
    Text: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,


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    PDF T0257AB SM8S42* 15054AA T0258AA FT0258AA HDS100

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY SCHOTTKY RECTIFIERS PACKAGE 2 LEAD HERMETIC &T\ DEVICE TYPE !0 avg AMPS TC=100°C PEAK INVERSE VOLTAGE VOLTS MAX VF @ *FM = 'O (avg) VOLTS 125°C MAX REVERSE CURRENT AMPS 125° C SPD735 7.0 35 0.75 0.015 SPD745 7.0 45 0.75 0.015 SPD1035 10.0 35


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    PDF SPD1035 SPD1045 SPD1635 SPD1645 SPD735 SPD745 SPD1535C SPD3020C SPD3035C SPD3045C

    Untitled

    Abstract: No abstract text available
    Text: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,


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    PDF T0258AA SM3S42* T0258AA FT0258AA HDS100

    Untitled

    Abstract: No abstract text available
    Text: h is s e ma i c or n dr u c t o r FSF450D, FSF450R " " m y m a m w m m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 9A, 500V, Tqs ^o N = 0.600ÎÎ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


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    PDF FSF450D, FSF450R 100kRADS 1-800-4-HARRIS

    rf 157

    Abstract: No abstract text available
    Text: Package outlines Package outlines and dimensions Sm artpack packages 4,25 "*i ^ ^ 24 MWHH 44 10 10 -M H 24 44 XT TT 1 H6 . 57 10 -es- K lH -87- C2 . 0,8 tzs. 10 I 113. C3 1.75 rn — 28 — èO 90 LÈ5 i=; 5! n o n o n o . i . o .n.o.n LJ LJ LJ LJ LJ 10 l -


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    PDF -es-87K rf 157

    50n06

    Abstract: No abstract text available
    Text: OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages


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    PDF OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST O-257 O-254 MIL-S-19500, 50n06

    Untitled

    Abstract: No abstract text available
    Text: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


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    PDF FSJ264D, FSJ264R 1-800-4-HARRIS

    H188

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.887 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTORS IRHM7054 IRHM8054 Z N-CHANNEL MEGA RAD HARO Product Summary 60 Volt, 0.027», MEGA RAD HARD HEXFET International Rectifier's M E G A RAD H A R D Technology HEXFETs


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    PDF IRHM7054 IRHM8054 1x106 1x105 MIL-STD-750, H-190 H188

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings


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    PDF JANSR2N7298 FRF450R4 1000K 1-800-4-HARRIS

    IRFG1Z0

    Abstract: irfh25 irfg9110 IRFH150
    Text: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15


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    PDF O-258 IRFV360 IRFV460 O-258 IRFH150 IRFH250 IRFH350 IRFH450 O-210AC IRFG110 IRFG1Z0 irfh25 irfg9110