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    SIHP10N40D Price and Stock

    Vishay Siliconix SIHP10N40D-GE3

    MOSFET N-CH 400V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP10N40D-GE3 Tube 267 1
    • 1 $1.99
    • 10 $1.99
    • 100 $1.99
    • 1000 $1.99
    • 10000 $1.99
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    Vishay Siliconix SIHP10N40D-E3

    MOSFET N-CH 400V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP10N40D-E3 Tube 1,000
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    • 1000 $0.81809
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    Vishay Semiconductors SIHP10N40D-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SIHP10N40D-E3 1,000
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    • 100 $0.94
    • 1000 $0.9
    • 10000 $0.83
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    Vishay Intertechnologies SIHP10N40D-GE3

    Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHP10N40D-GE3 1
    • 1 $1.06
    • 10 $0.96
    • 100 $0.76
    • 1000 $0.71
    • 10000 $0.71
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    Vishay Siliconix SIHP10N40DGE3

    POWER MOSFET Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHP10N40DGE3 750
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    Find more SIHP10N40D price and stock on Findchips.com

    SIHP10N40D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP10N40D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220AB Original PDF
    SIHP10N40D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220AB Original PDF

    SIHP10N40D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		PDF SiHP10N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		PDF SiHP10N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		PDF SiHP10N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		PDF SiHP10N40D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP10N40D AN609, 9451m 7612m 8699m 4238m 5016m 7470m 2897m 1892m

    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		PDF SiHP10N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		PDF SiHP10N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836