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    Vishay Intertechnologies SIA459EDJ-T1-GE3

    Trans MOSFET P-CH 20V 9A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA459EDJ-T1-GE3)
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    Avnet Americas SIA459EDJ-T1-GE3 Reel 22 Weeks 6,000
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    Mouser Electronics SIA459EDJ-T1-GE3 124,131
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    Verical SIA459EDJ-T1-GE3 6,000 6,000
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    Arrow Electronics SIA459EDJ-T1-GE3 6,000 20 Weeks 6,000
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    Newark SIA459EDJ-T1-GE3 Bulk 58,030 5
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    Bristol Electronics SIA459EDJ-T1-GE3 865
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    TTI SIA459EDJ-T1-GE3 Reel 6,000
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    Avnet Asia SIA459EDJ-T1-GE3 24 Weeks 6,000
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    Vyrian SIA459EDJ-T1-GE3 53,193
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    SIA459EDJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA459EDJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 9A SC70 Original PDF

    SIA459EDJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SiA459EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0350 at VGS = - 4.5 V -9 - 20 0.0395 at VGS = - 3.7 V -9 0.0620 at VGS = - 2.5 V -9 Qg (Typ.) 10 nC PowerPAK SC-70-6L-Single


    Original     		SiA459EDJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF