SI8457DB Search Results

Contextual Info: Product Group: Vishay Siliconix, MOSFETs / September 2014 Author: Kim Norton Tel: 1 408-970-5300 E-mail: kim.norton@vishay.com Si8457DB Chipscale P-Channel MOSFET With Industry-First On-Resistance of 35 mΩ at 1.8 V, ± 8 V VGS Rating in a 1.6 mm by 1.6 mm Outline

Contextual Info: SPICE Device Model Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.0190 at VGS = -4.5 V -10.2 0.0234 at VGS = -2.5 V -9.2 0.0350 at VGS = -1.8 V -7.5 VDS (V) -12 Qg (TYP.) 37 nC 6 1. 7 845xx x m m

Contextual Info: Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a,e 0.0190 at VGS = -4.5 V -10.2 0.0234 at VGS = -2.5 V -9.2 0.0350 at VGS = -1.8 V -7.5 VDS (V) -12 Qg (TYP.) 37 nC 6 1. 7 845xx x m m mm

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