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Vishay Siliconix SI7943DP-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI7943DP-T1		1,250		2	1 - 10 $2.184 100 $1.5681 1000 $1.3776 10000 $1.3776	Buy Now
Quest Components	SI7943DP-T1		1,000			1 $4.5 10 $4.5 100 $2.1 1000 $1.95 10000 $1.95	Buy Now

SI7943DP Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si7943DP		Vishay Intertechnology	Dual P-Channel 30-V (D-S) MOSFET		Original	PDF
SI7943DP		Vishay Siliconix	MOSFETs		Original	PDF
Si7943DP		Vishay Telefunken	Dual P-channel 30-v (d-s) Mosfet		Original	PDF
SI7943DP-DS		Vishay Telefunken	DS-Spice Model for Si7943DP		Original	PDF

SI7943DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si7943DP Abstract: No abstract text available Text: Si7943DP New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.025 @ VGS = –10 V –9.4 0.030 @ VGS = –4.5 V –8.6 0.045 @ VGS = –2.5 V –7.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt	Original	Si7943DP 07-mm S-04438--Rev. 13-Aug-01	PDF
Si7943DP Abstract: Si7943 Text: Si7943DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 30 rDS(on) (Ω) ID (A) 0.025 at VGS = – 10 V – 9.4 0.030 at VGS = – 4.5 V – 8.6 0.045 at VGS = – 2.5 V – 7.0 • TrenchFET Power MOSFET	Original	Si7943DP 07-mm Si7943DP-T1 Si7943DP-T1--E3 18-Jul-08 Si7943	PDF
Si7943DP Abstract: No abstract text available Text: 3 SPICE Device Model Si7943DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7943DP 0-to-10V 02-Aug-01	PDF
Si7943DP Abstract: No abstract text available Text: Si7943DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 30 rDS(on) (Ω) ID (A) 0.025 at VGS = – 10 V – 9.4 0.030 at VGS = – 4.5 V – 8.6 0.045 at VGS = – 2.5 V – 7.0 • TrenchFET Power MOSFET	Original	Si7943DP 07-mm Si7943DP-T1 Si7943DP-T1--E3 S-52555-Rev. 19-Dec-05	PDF
Untitled Abstract: No abstract text available Text: Si7943DP New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.025 @ VGS = –10 V –9.4 0.030 @ VGS = –4.5 V –8.6 0.045 @ VGS = –2.5 V –7.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt	Original	Si7943DP 07-mm 08-Apr-05	PDF
Si7943DP Abstract: A2315 Text: 3 SPICE Device Model Si7943DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7943DP 31-May-04 A2315	PDF
Untitled Abstract: No abstract text available Text: Si7943DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 30 rDS(on) (Ω) ID (A) 0.025 at VGS = – 10 V – 9.4 0.030 at VGS = – 4.5 V – 8.6 0.045 at VGS = – 2.5 V – 7.0 • TrenchFET Power MOSFET	Original	Si7943DP 07-mm Si7943DP-T1 Si7943DP-T1--E3 08-Apr-05	PDF