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Vishay Siliconix SI5445DC-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI5445DC-T1		2,920		3	1 - 10 $2.1 100 $1.3125 1000 $0.735 10000 $0.693	Buy Now
Quest Components	SI5445DC-T1		2,336			1 $2.8 10 $2.8 100 $2.8 1000 $0.875 10000 $0.77	Buy Now
	SI5445DC-T1		20			1 $2.475 10 $2.277 100 $1.98 1000 $1.98 10000 $1.98	Buy Now
Vishay Intertechnologies SI5445DC-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI5445DC-T1		1,443			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI5445DC-T1-E3 5200 MA, 8 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI5445DC-T1-E3		140			1 $2.212 10 $2.212 100 $0.8295 1000 $0.8295 10000 $0.8295	Buy Now

SI5445DC Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si5445DC		Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI5445DC		Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI5445DC		Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI5445DC		Vishay Telefunken	Si5445BDC vs. Si5445DC Comparison		Original	PDF
Si5445DC SPICE Device Model		Vishay	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI5445DC-T1		Vishay	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI5445DC-T1		Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET		Original	PDF

SI5445DC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking code BC Abstract: Si5445DC Text: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BC XX	Original	PDF	Si5445DC S-63999--Rev. 04-Oct-99 marking code BC
SI5445DC-T1 Abstract: 1206 8 ChipFET Si5445BDC Si5445DC Text: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: P-Channel, 1.8 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1 Replaces Si5445DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	PDF	Si5445BDC Si5445DC Si5445BDC-T1-E3 Si5445DC-T1-E3 Si5445BDC-T1 Si5445DC-T1 09-Nov-06 1206 8 ChipFET
Si5445DC Abstract: No abstract text available Text: SPICE Device Model Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si5445DC 07-Oct-99
Si5445DC Abstract: No abstract text available Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application	Original	PDF	Si5445DC 18-Jul-08
marking code BC Abstract: No abstract text available Text: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BC XX S	Original	PDF	Si5445DC S-63999--Rev. 04-Oct-99 marking code BC
marking code BC Abstract: No abstract text available Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability	Original	PDF	Si5445DC Si5445DC-T1 08-Apr-05 marking code BC
Si5445DC Abstract: No abstract text available Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application	Original	PDF	Si5445DC 20-May-04
Si5445BDC Abstract: Si5445DC Si5445DC-T1 Text: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: Package: Pin Out: P-Channel, 1.8-V G-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1-E3 Replaces Si5445DC-T1	Original	PDF	Si5445BDC Si5445DC Si5445BDC-T1-E3 Si5445DC-T1-E3 Si5445DC-T1
2 a diode Abstract: Si5445DC Si5445DC-T1 71063 marking code BC Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability	Original	PDF	Si5445DC Si5445DC-T1 S-21251--Rev. 05-Aug-02 2 a diode 71063 marking code BC
VISHAY BC 047 Abstract: Si5445DC Si5445DC-T1 Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability	Original	PDF	Si5445DC Si5445DC-T1 18-Jul-08 VISHAY BC 047
transistor C639-c640 Abstract: BJT C828 c828 npn transistor datasheet KBC 1091 NU kbc 1091 pin configuration NPN transistor c828 c828 transistor c1583 transistor c1583 c828 npn transistor Text: R Intel 830 Chipset Family Platform Design Guide October 2001 Order Number: 298339-002 ® Intel 830M Chipset Family R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual	Original	PDF	R1593 R1592 u5003 MAX1718 R1579 pin14 transistor C639-c640 BJT C828 c828 npn transistor datasheet KBC 1091 NU kbc 1091 pin configuration NPN transistor c828 c828 transistor c1583 transistor c1583 c828 npn transistor
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	PDF	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Power Amplifier GSM Abstract: smd transistor A1 HB CGY2015 SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier Text: INTEGRATED CIRCUITS DATA SHEET CGY2015 GSM/DCS/PCS power amplifier Preliminary specification 2002 Mar 12 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2015 FEATURES GENERAL DESCRIPTION • 3.5 V nominal supply voltage The CGY2015 is a dual GaAs Monolithic Microwave	Original	PDF	CGY2015 CGY2015 HVQFN16 SCA74 403506/01/pp24 Power Amplifier GSM smd transistor A1 HB SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier
eta mos Abstract: 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4 Text: AND8049/D SPICE Device Model NTHS5445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	PDF	AND8049/D NTHS5445T1 r14525 eta mos 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4